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Paper Abstract and Keywords
Presentation 2012-12-17 15:55
[Poster Presentation] Temperature Dependence of Phase Change Random Access Memory (PRAM)
Toru Egami, Koh Johguchi, Ken Takeuchi (Chuo Univ) ICD2012-107 Link to ES Tech. Rep. Archives: ICD2012-107
Abstract (in Japanese) (See Japanese page) 
(in English) Phase Change Random Access Memory (PRAM) is considered as one of the most promising candidates for the next generation non-volatile memory, due to high speed write, high density data storage and scaling capability. Chalcogenide is used for a PRAM cell, and the data is stored as the difference of resistances between crystalline and amorphous phases. However, the resistance value of PRAM can be changed with temperature condition. Therefore, in this paper, the temperature dependence of PRAM is investigated. At the high temperature of 85 ºC, the resistance decreases 70% and 85% for SET and RESET states, respectively, compared with 25 ºC. In addition, the SET operation becomes easier as the temperature rises, while the RESET condition requires high pulse voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) PRAM / crystalline / amorphous / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 365, ICD2012-107, pp. 65-65, Dec. 2012.
Paper # ICD2012-107 
Date of Issue 2012-12-10 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2012-107 Link to ES Tech. Rep. Archives: ICD2012-107

Conference Information
Committee ICD  
Conference Date 2012-12-17 - 2012-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Tech Front 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2012-12-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature Dependence of Phase Change Random Access Memory (PRAM) 
Sub Title (in English)  
Keyword(1) PRAM  
Keyword(2) crystalline  
Keyword(3) amorphous  
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1st Author's Name Toru Egami  
1st Author's Affiliation Chuo University (Chuo Univ)
2nd Author's Name Koh Johguchi  
2nd Author's Affiliation Chuo University (Chuo Univ)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ)
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Date Time 2012-12-17 15:55:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # ICD2012-107 
Volume (vol) vol.112 
Number (no) no.365 
Page p.65 
#Pages
Date of Issue 2012-12-10 (ICD) 


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