Paper Abstract and Keywords |
Presentation |
2012-12-17 15:55
[Poster Presentation]
Temperature Dependence of Phase Change Random Access Memory (PRAM) Toru Egami, Koh Johguchi, Ken Takeuchi (Chuo Univ) ICD2012-107 Link to ES Tech. Rep. Archives: ICD2012-107 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Phase Change Random Access Memory (PRAM) is considered as one of the most promising candidates for the next generation non-volatile memory, due to high speed write, high density data storage and scaling capability. Chalcogenide is used for a PRAM cell, and the data is stored as the difference of resistances between crystalline and amorphous phases. However, the resistance value of PRAM can be changed with temperature condition. Therefore, in this paper, the temperature dependence of PRAM is investigated. At the high temperature of 85 ºC, the resistance decreases 70% and 85% for SET and RESET states, respectively, compared with 25 ºC. In addition, the SET operation becomes easier as the temperature rises, while the RESET condition requires high pulse voltage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
PRAM / crystalline / amorphous / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 365, ICD2012-107, pp. 65-65, Dec. 2012. |
Paper # |
ICD2012-107 |
Date of Issue |
2012-12-10 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2012-107 Link to ES Tech. Rep. Archives: ICD2012-107 |
Conference Information |
Committee |
ICD |
Conference Date |
2012-12-17 - 2012-12-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Tech Front |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
|
Paper Information |
Registration To |
ICD |
Conference Code |
2012-12-ICD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Temperature Dependence of Phase Change Random Access Memory (PRAM) |
Sub Title (in English) |
|
Keyword(1) |
PRAM |
Keyword(2) |
crystalline |
Keyword(3) |
amorphous |
Keyword(4) |
|
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Toru Egami |
1st Author's Affiliation |
Chuo University (Chuo Univ) |
2nd Author's Name |
Koh Johguchi |
2nd Author's Affiliation |
Chuo University (Chuo Univ) |
3rd Author's Name |
Ken Takeuchi |
3rd Author's Affiliation |
Chuo University (Chuo Univ) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2012-12-17 15:55:00 |
Presentation Time |
120 minutes |
Registration for |
ICD |
Paper # |
ICD2012-107 |
Volume (vol) |
vol.112 |
Number (no) |
no.365 |
Page |
p.65 |
#Pages |
1 |
Date of Issue |
2012-12-10 (ICD) |
|