Paper Abstract and Keywords |
Presentation |
2012-12-17 11:50
An Analysis and Evaluation of MOSFET Strain Sensor Using Pseudo-Hall Effect Tetsuya Umetsu, Tomochika Harada, Sumio Okuyama, Koichi Matsushita (Yamagata Univ.) ICD2012-89 Link to ES Tech. Rep. Archives: ICD2012-89 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, most of the LSI chip applies packaging process for protecting Si chip, but internal stress in Si chip may be generated. It is necessary to measure and evaluate internal stress, because the characteristics of circuit may be damaged or changed. However, integration area increases with the existing strain sensor because it can't integrate with other circuits. So, by using the MOSFET type stress detection element that utilizes the pseudo-Hall effect, it can be integrated without increasing integration area. In this paper, we design, analyze and evaluate a strain sensor based on MOSFET using pseudo-Hall effect. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Pseudo-Hall Effect / MOSFET / Strain Sensor / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 365, ICD2012-89, pp. 11-16, Dec. 2012. |
Paper # |
ICD2012-89 |
Date of Issue |
2012-12-10 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2012-89 Link to ES Tech. Rep. Archives: ICD2012-89 |
Conference Information |
Committee |
ICD |
Conference Date |
2012-12-17 - 2012-12-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Tech Front |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ICD |
Conference Code |
2012-12-ICD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
An Analysis and Evaluation of MOSFET Strain Sensor Using Pseudo-Hall Effect |
Sub Title (in English) |
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Keyword(1) |
Pseudo-Hall Effect |
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MOSFET |
Keyword(3) |
Strain Sensor |
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1st Author's Name |
Tetsuya Umetsu |
1st Author's Affiliation |
Yamagata University (Yamagata Univ.) |
2nd Author's Name |
Tomochika Harada |
2nd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
3rd Author's Name |
Sumio Okuyama |
3rd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
4th Author's Name |
Koichi Matsushita |
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Yamagata University (Yamagata Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-12-17 11:50:00 |
Presentation Time |
25 minutes |
Registration for |
ICD |
Paper # |
ICD2012-89 |
Volume (vol) |
vol.112 |
Number (no) |
no.365 |
Page |
pp.11-16 |
#Pages |
6 |
Date of Issue |
2012-12-10 (ICD) |
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