Paper Abstract and Keywords |
Presentation |
2012-12-13 11:25
1550nm/1310nm dual wavelength high power LD Shintaro Morimoto, Hiroshi Mori, Atsushi Yamada, Yasuaki Nagashima, Motoaki Fujita, Shinichi Onuki, Hiroaki Yoshidaya, Kazuaki Mise (Anritsu Devices) LQE2012-125 Link to ES Tech. Rep. Archives: LQE2012-125 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a high power 1550nm/1310nm dual wavelength laser diode, which is suitable for Optical Time Domain Reflectometer. It has 1550nm and 1310nm active layers aligned in tandem. The cavity for 1550nm
light consists of front facet and rear facet, and that for 1310nm light consists of front facet and a grating located in center of the chip. Over 150mW output power was obtained for both of 1310nm and 1550nm light, by adjusting the grating length and cavity lengths. The fiber coupling efficiency of 80% was achieved by introducing partially tapered waveguide structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
semiconductor laser / integration / fiber coupling efficiency / OTDR / dual wavelength / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 356, LQE2012-125, pp. 19-22, Dec. 2012. |
Paper # |
LQE2012-125 |
Date of Issue |
2012-12-06 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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LQE2012-125 Link to ES Tech. Rep. Archives: LQE2012-125 |
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