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| Presentation | 2012-12-13 11:50 Asymmetric Ridge-type Semiconductor Laser with a Selectively Formed Single-Sided Antiguiding Cladding Layer Masahiro Higaki, Takahiro Numai (Ritsumeikan Univ.)  LQE2012-126 Link to ES Tech. Rep. Archives: LQE2012-126 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to decrease the threshold current and obtain kinkfree operations in 980 nm semiconductor lasers, which are pumping sources of erbium-doped optical-fiber amplifiers, an asymmetric ridge-type semiconductor laser with a selectively formed single-sided antiguiding cladding layer is proposed and simulated. Laser characteristics of the proposed asymmetric ridge structure are compared with those of a conventional ridge structure and a symmetric ridge structure with a selectively formed double-sided antiguiding cladding layers. It is found that the threshold current of the proposed asymmetric ridge structure is lower than that of the symmetric ridge structure while keeping kink-free operation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Semiconductor Lasers / Kink / Ridge Structure / Antiguiding / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 356, LQE2012-126, pp. 23-26, Dec. 2012. | |
| Paper # | LQE2012-126 | |
| Date of Issue | 2012-12-06 (LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | LQE2012-126 Link to ES Tech. Rep. Archives: LQE2012-126 |
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| Conference Information | |
| Committee | LQE |
| Conference Date | 2012-12-13 - 2012-12-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2012-12-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Asymmetric Ridge-type Semiconductor Laser with a Selectively Formed Single-Sided Antiguiding Cladding Layer |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor Lasers |
| Keyword(2) | Kink |
| Keyword(3) | Ridge Structure |
| Keyword(4) | Antiguiding |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Masahiro Higaki |
| 1st Author's Affiliation | Ritsumeikan University (Ritsumeikan Univ.) |
| 2nd Author's Name | Takahiro Numai |
| 2nd Author's Affiliation | Ritsumeikan University (Ritsumeikan Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-13 11:50:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | LQE2012-126 |
| Volume (vol) | vol.112 |
| Number (no) | no.356 |
| Page | pp.23-26 |
| #Pages | 4 |
| Date of Issue | 2012-12-06 (LQE) |
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