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| Presentation | 2012-12-13 13:30 A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors Satoshi Tasaki, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC)  MW2012-127 Link to ES Tech. Rep. Archives: MW2012-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In cascode circuit configuration, a method to expand circuit design range by setting a DC bias node to a connection point between two transistors is proposed. This method can set independently operating mode of two transistors. Focusing on bias voltage dependence of amplification characteristics, a cascode power amplifier of independently biased GaAs pHEMT was designed and fabricated for the purpose of realizing high-efficiency characteristic and miniaturization of circuit. The performance of the amplifier was evaluated by focusing on bias voltage dependence of amplification characteristic. As a result, power added efficiency (PAE) of the amplifier was achieved over 53% from 1.2 to 2.0 GHz. Also, the performance of this cascode configuration showed superior performance compared to the conventional cascode one. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MMICs / microwave circuit / power amplifiers / cascode circuit / independently biased cascode amplifier / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 355, MW2012-127, pp. 1-6, Dec. 2012. | |
| Paper # | MW2012-127 | |
| Date of Issue | 2012-12-06 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2012-127 Link to ES Tech. Rep. Archives: MW2012-127 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2012-12-13 - 2012-12-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Yamanashi |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2012-12-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 1.2-2.0 GHz-band GaAs pHEMT Cascode Power Amplifier MMIC Consisting of Independently Biased Transistors |
| Sub Title (in English) | |
| Keyword(1) | MMICs |
| Keyword(2) | microwave circuit |
| Keyword(3) | power amplifiers |
| Keyword(4) | cascode circuit |
| Keyword(5) | independently biased cascode amplifier |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Satoshi Tasaki |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Yoichiro Takayama |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Ryo Ishikawa |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
| 4th Author's Name | Kazuhiko Honjo |
| 4th Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2012-12-13 13:30:00 |
| Presentation Time | 30 minutes |
| Registration for | MW |
| Paper # | MW2012-127 |
| Volume (vol) | vol.112 |
| Number (no) | no.355 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2012-12-06 (MW) |
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