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| Presentation | 2012-12-07 16:30 Memory characteristics of ReRAM filament confined in localized area. Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.)  SDM2012-136 Link to ES Tech. Rep. Archives: SDM2012-136 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Clarification of memory characteristics of tiny cell is important for practical use of resistive random access memory (ReRAM). However, limitation of semiconductor micro-fabrication technology hinders to obtain memory characteristics caused by one and only filament confined in tiny cell with area of smaller than 20 x 20 nm2. In this paper, we established a method to prepare a very small memory cell by fabricating ReRAM structure on the tip of a cantilever of atomic force microscope (AFM). We also established a method to operate the small cell at a reset current low enough to avoid serious damage to the cantilever due to Joule heat generated by high current density at the tip of the cantilever. The effective cell size was estimated to be less than φ20 nm due to concentration of electric field at the tip of a cantilever by using an electromagnetic field simulator basing on finite element method. The experimental result that is not consistent with resistive switching models basing on adsorption or absorption of oxygen ions into an anode for set switching to occur was suggested, by making the most of the unique structure having a removable bottom electrode. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ReRAM / Tiny cell / NiO / AFM / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 337, SDM2012-136, pp. 123-127, Dec. 2012. | |
| Paper # | SDM2012-136 | |
| Date of Issue | 2012-11-30 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-136 Link to ES Tech. Rep. Archives: SDM2012-136 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2012-12-07 - 2012-12-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si-related Materials and Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2012-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Memory characteristics of ReRAM filament confined in localized area. |
| Sub Title (in English) | |
| Keyword(1) | ReRAM |
| Keyword(2) | Tiny cell |
| Keyword(3) | NiO |
| Keyword(4) | AFM |
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| 1st Author's Name | Sang-gyu Koh |
| 1st Author's Affiliation | Tottori University (Tottori Univ.) |
| 2nd Author's Name | Kentaro Kinoshita |
| 2nd Author's Affiliation | Tottori University (Tottori Univ.) |
| 3rd Author's Name | Takahiro Fukuhara |
| 3rd Author's Affiliation | Tottori University (Tottori Univ.) |
| 4th Author's Name | Yusuke Sawai |
| 4th Author's Affiliation | Tottori University (Tottori Univ.) |
| 5th Author's Name | Satoru Kishida |
| 5th Author's Affiliation | Tottori University (Tottori Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-07 16:30:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | SDM2012-136 |
| Volume (vol) | vol.112 |
| Number (no) | no.337 |
| Page | pp.123-127 |
| #Pages | 5 |
| Date of Issue | 2012-11-30 (SDM) |
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