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| Presentation | 2012-12-07 11:15 Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)  SDM2012-120 Link to ES Tech. Rep. Archives: SDM2012-120 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Si substrates irradiated with polyatomic ions, which wereC$_{3}$H$_{7}^{+}$，C$_{6}$H$_{13}^{+}$\ and C$_{12}$H$_{25}^{+}$\ generated from $n$-tetradecane, were evaluated for surface chemical state by Raman spectrum spectroscopy, and for carbon amount and irradiation damage by Rutherford backscattering spectroscopy.C$_{3}$H$_{7}^{+}$\ and C$_{6}$H$_{13}^{+}$\ samples were found to be deposited with DLC.HoweverC$_{12}$H$_{25}^{+}$\ samples tend to be more clearely sputtered at high acceleration voltage. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ion irradiation / silicon / polyatomic / ion beam / teteradecane / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 337, SDM2012-120, pp. 31-35, Dec. 2012. | |
| Paper # | SDM2012-120 | |
| Date of Issue | 2012-11-30 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-120 Link to ES Tech. Rep. Archives: SDM2012-120 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2012-12-07 - 2012-12-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si-related Materials and Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2012-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams |
| Sub Title (in English) | |
| Keyword(1) | Ion irradiation |
| Keyword(2) | silicon |
| Keyword(3) | polyatomic |
| Keyword(4) | ion beam |
| Keyword(5) | teteradecane |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kosuke Imanaka |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Mitsuaki Takeuchi |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 3rd Author's Name | Hiromichi Ryuto |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Gikan H. Takaoka |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-07 11:15:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | SDM2012-120 |
| Volume (vol) | vol.112 |
| Number (no) | no.337 |
| Page | pp.31-35 |
| #Pages | 5 |
| Date of Issue | 2012-11-30 (SDM) |
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