Paper Abstract and Keywords |
Presentation |
2012-12-07 16:45
Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,) SDM2012-137 Link to ES Tech. Rep. Archives: SDM2012-137 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the effects of the top electrode (TE) materials on the resistive switching (RS) characteristics of TE/TiO$_2$/Pt stack structures. TE/TiO2/Pt with Pt, Ag, Al as a TE showed a nonpolar, bipolar, or unstable nonpolar type RS behavior, respectivety. When TE was set as a cathode electrode, Ag-based devices showed similar characteristics to Pt-based ones. It is suggested that RS is induced near the anode. On the other hand, characteristics of Al-based devices differ from others, which the state of the devices aftter forming process showed High Resistance State (HRS) when Al was set as a cathodeelectrode. This result suggest redox reaction at Al/TiO$_2$ interface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ReRAM / TiO2 / Electrode Material / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 337, SDM2012-137, pp. 129-132, Dec. 2012. |
Paper # |
SDM2012-137 |
Date of Issue |
2012-11-30 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-137 Link to ES Tech. Rep. Archives: SDM2012-137 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-12-07 - 2012-12-07 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si-related Materials and Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures |
Sub Title (in English) |
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Keyword(1) |
ReRAM |
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TiO2 |
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Electrode Material |
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1st Author's Name |
Naoki Okimoto |
1st Author's Affiliation |
Kyoto University (Kyoto Univ,) |
2nd Author's Name |
Tatsuya Iwata |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ,) |
3rd Author's Name |
Yusuke Nishi |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ,) |
4th Author's Name |
Tsunenobu Kimoto |
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Kyoto University (Kyoto Univ,) |
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Speaker |
Author-1 |
Date Time |
2012-12-07 16:45:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
SDM2012-137 |
Volume (vol) |
vol.112 |
Number (no) |
no.337 |
Page |
pp.129-132 |
#Pages |
4 |
Date of Issue |
2012-11-30 (SDM) |
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