Paper Abstract and Keywords |
Presentation |
2012-12-07 10:15
Plasmaless etching of silicon carbide using chlorine based gas Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2012-116 Link to ES Tech. Rep. Archives: SDM2012-116 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon carbide (SiC) could be etched by a plasmaless process in chlorine based ambient over 900oC. The etch pits were formed on the Si-terminated (0001) face. On the other hand, the etching rate of the C-terminated (000-1) face was fastest in all SiC crystal faces, which could be obtained over 10μm/h. To evaluate an etching damage, Schottky contacts were fabricated on the plasmaless etched surface, and a leakage current was low under the reverse bias condition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / etching / plasmaless / chlorine / oxygen / crystal planes / EBIC / dislocation |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 337, SDM2012-116, pp. 7-12, Dec. 2012. |
Paper # |
SDM2012-116 |
Date of Issue |
2012-11-30 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-116 Link to ES Tech. Rep. Archives: SDM2012-116 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-12-07 - 2012-12-07 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si-related Materials and Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Plasmaless etching of silicon carbide using chlorine based gas |
Sub Title (in English) |
|
Keyword(1) |
SiC |
Keyword(2) |
etching |
Keyword(3) |
plasmaless |
Keyword(4) |
chlorine |
Keyword(5) |
oxygen |
Keyword(6) |
crystal planes |
Keyword(7) |
EBIC |
Keyword(8) |
dislocation |
1st Author's Name |
Tomoaki Hatayama |
1st Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
2nd Author's Name |
Ryouta Hori |
2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
3rd Author's Name |
Tetsuya Tamura |
3rd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
4th Author's Name |
Hiroshi Yano |
4th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
5th Author's Name |
Takashi Fuyuki |
5th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
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Speaker |
Author-1 |
Date Time |
2012-12-07 10:15:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
SDM2012-116 |
Volume (vol) |
vol.112 |
Number (no) |
no.337 |
Page |
pp.7-12 |
#Pages |
6 |
Date of Issue |
2012-11-30 (SDM) |