IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-12-07 13:30
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2012-125 Link to ES Tech. Rep. Archives: SDM2012-125
Abstract (in Japanese) (See Japanese page) 
(in English) Transparent amorphous oxide semiconductor (TAOS) has attracted considerable attention as an alternative material for a-Si to develop thin film transistors for next generation devices. However, it has reported that a degradation phenomenon for TAOS was caused by changing of density of state (DOS) in the bulk based on amorphous structure. In this report, we have performed device simulation (ATLAS) in order to clarify the degradation phenomena.
Keyword (in Japanese) (See Japanese page) 
(in English) oxide semiconductor / thin film transistor / device simulation / density of state / inteface trap / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 337, SDM2012-125, pp. 59-64, Dec. 2012.
Paper # SDM2012-125 
Date of Issue 2012-11-30 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-125 Link to ES Tech. Rep. Archives: SDM2012-125

Conference Information
Committee SDM  
Conference Date 2012-12-07 - 2012-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2012-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation 
Sub Title (in English)  
Keyword(1) oxide semiconductor  
Keyword(2) thin film transistor  
Keyword(3) device simulation  
Keyword(4) density of state  
Keyword(5) inteface trap  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Satoshi Urakawa  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Yoshihiro Ueoka  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Haruka Yamazaki  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Yasuaki Ishikawa  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Yukiharu Uraoka  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2012-12-07 13:30:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # SDM2012-125 
Volume (vol) vol.112 
Number (no) no.337 
Page pp.59-64 
#Pages
Date of Issue 2012-11-30 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan