Paper Abstract and Keywords |
Presentation |
2012-12-07 13:30
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2012-125 Link to ES Tech. Rep. Archives: SDM2012-125 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Transparent amorphous oxide semiconductor (TAOS) has attracted considerable attention as an alternative material for a-Si to develop thin film transistors for next generation devices. However, it has reported that a degradation phenomenon for TAOS was caused by changing of density of state (DOS) in the bulk based on amorphous structure. In this report, we have performed device simulation (ATLAS) in order to clarify the degradation phenomena. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
oxide semiconductor / thin film transistor / device simulation / density of state / inteface trap / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 337, SDM2012-125, pp. 59-64, Dec. 2012. |
Paper # |
SDM2012-125 |
Date of Issue |
2012-11-30 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-125 Link to ES Tech. Rep. Archives: SDM2012-125 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-12-07 - 2012-12-07 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si-related Materials and Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation |
Sub Title (in English) |
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Keyword(1) |
oxide semiconductor |
Keyword(2) |
thin film transistor |
Keyword(3) |
device simulation |
Keyword(4) |
density of state |
Keyword(5) |
inteface trap |
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1st Author's Name |
Satoshi Urakawa |
1st Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
2nd Author's Name |
Yoshihiro Ueoka |
2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
3rd Author's Name |
Haruka Yamazaki |
3rd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
4th Author's Name |
Yasuaki Ishikawa |
4th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
5th Author's Name |
Yukiharu Uraoka |
5th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
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Speaker |
Author-1 |
Date Time |
2012-12-07 13:30:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
SDM2012-125 |
Volume (vol) |
vol.112 |
Number (no) |
no.337 |
Page |
pp.59-64 |
#Pages |
6 |
Date of Issue |
2012-11-30 (SDM) |