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| Presentation | 2012-12-07 10:00 Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)  SDM2012-115 Link to ES Tech. Rep. Archives: SDM2012-115 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In this study, we have designed edge termination by device simulation, especially Space-Modulated Junction Termination Extension (SM-JTE) structure that our group proposed. With the designed SM-JTE, we have fabricated SiC PiN diodes with over 17 kV breakdown voltages in wider range of JTE dose, which indicates SM-JTE is a promising edge termination structure to realize ultrahigh-voltage SiC bipolar devices. Furthermore, by performing lifetime enhancement process via thermal oxidation, we have demonstrated drastic improvement of the on-state voltage drop and the differential on-resistance of the PiN diodes. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / PiN diode / Junction Termination Extension (JTE) / Device simulation / Carrier lifetime / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 337, SDM2012-115, pp. 1-5, Dec. 2012. | |
| Paper # | SDM2012-115 | |
| Date of Issue | 2012-11-30 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-115 Link to ES Tech. Rep. Archives: SDM2012-115 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2012-12-07 - 2012-12-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si-related Materials and Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2012-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | PiN diode |
| Keyword(3) | Junction Termination Extension (JTE) |
| Keyword(4) | Device simulation |
| Keyword(5) | Carrier lifetime |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Naoki Kaji |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Hiroki Niwa |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 3rd Author's Name | Jun Suda |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Tsunenobu Kimoto |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-07 10:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | SDM2012-115 |
| Volume (vol) | vol.112 |
| Number (no) | no.337 |
| Page | pp.1-5 |
| #Pages | 5 |
| Date of Issue | 2012-11-30 (SDM) |
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