Paper Abstract and Keywords |
Presentation |
2012-12-07 16:15
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.) SDM2012-135 Link to ES Tech. Rep. Archives: SDM2012-135 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Improvement of memory performance of conducting-bridge random access memory (CB-RAM) is possible simply by replacing conventionally used solid electrolytes with metal oxides such as HfO2. However, elucidation of parameters which are related to switching speed is still an open issue.
In this paper, we estimated four parameters of reset time (treset), reset voltage (Vreset), reset temperature, and resistance in low resistance state (RLRS) at the same time, and discussed correlation between them. As a result, it was suggested that making RLRS higher and applying higher Vreset is crucial for getting treset shorter. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CB-RAM / switching speed / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 337, SDM2012-135, pp. 119-122, Dec. 2012. |
Paper # |
SDM2012-135 |
Date of Issue |
2012-11-30 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-135 Link to ES Tech. Rep. Archives: SDM2012-135 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-12-07 - 2012-12-07 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si-related Materials and Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory |
Sub Title (in English) |
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Keyword(1) |
CB-RAM |
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switching speed |
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1st Author's Name |
Shigeyuki Tsuruta |
1st Author's Affiliation |
Tottori University (Tottori Univ.) |
2nd Author's Name |
Kentaro Kinoshita |
2nd Author's Affiliation |
Tottori University (Tottori Univ.) |
3rd Author's Name |
Sho Hasegawa |
3rd Author's Affiliation |
Tottori University (Tottori Univ.) |
4th Author's Name |
Yutaro Enomoto |
4th Author's Affiliation |
Tottori University (Tottori Univ.) |
5th Author's Name |
Satoru Kishida |
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Tottori University (Tottori Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-12-07 16:15:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
SDM2012-135 |
Volume (vol) |
vol.112 |
Number (no) |
no.337 |
Page |
pp.119-122 |
#Pages |
4 |
Date of Issue |
2012-11-30 (SDM) |
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