Paper Abstract and Keywords |
Presentation |
2012-11-30 13:15
Mg acceptor activation inp-GaN of the structure with n-GaN surface Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-83 CPM2012-140 LQE2012-111 Link to ES Tech. Rep. Archives: ED2012-83 CPM2012-140 LQE2012-111 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopants in Mg-doped GaN. Meanwhile several groups have reported that hydrogen atoms did not exist in n-GaN. Therefore, it is suggested that desorption of hydrogen atoms from p-GaN entirely covered with n-GaN surfaces should be suppressed, resulting in insufficient Mg activation. In this paper, we investigated Mg activation in p-GaN and tunnel junction p-GaInN covered with n-GaN surfaces. We optimized device fabrication process including the thermal annealing step and evaluated current-voltage characteristics. As a result, we found that Mg activation from the surfaces was inhibited due to the n-GaN surfaces and laterally extend from etched sidewalls in the LED structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Tunnel Junction / nitride semiconductors / GaN / Mg / activation annealing / hydrogen / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 329, LQE2012-111, pp. 81-85, Nov. 2012. |
Paper # |
LQE2012-111 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2012-83 CPM2012-140 LQE2012-111 Link to ES Tech. Rep. Archives: ED2012-83 CPM2012-140 LQE2012-111 |
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