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| Presentation | 2012-11-30 15:35 Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices Kenichi Kawaguchi, Yoshiaki Nakata, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Lab.), Yasuhiko Arakawa (Univ. of Tokyo)  ED2012-88 CPM2012-145 LQE2012-116 Link to ES Tech. Rep. Archives: ED2012-88 CPM2012-145 LQE2012-116 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | InP-based nanowire (NW) heterostructures have attracted attentions as a building block for fabricating nano-scale light emitting devices in the near-infrared region. We investigated the growth of radial InP/InAsP quantum wells (QWs) on wurtzite (WZ) InP NWs using metalorganic vapor phase epitaxy and their optical properties. Radial InAsP QW layers were epitaxially grown on WZ-InP NW cores, which resulted in WZ-NW shells with smooth surface and high crystalline quality. Photoluminescence wavelengths were successfully controlled by adjusting the radial QW thickness and arsenic composition of InAsP, and emissions in the 1.3-μm region were demonstrated at room temperature. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InP nanowire / wurtzite crystal / radial InP/InAsP quantum well / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 329, LQE2012-116, pp. 109-112, Nov. 2012. | |
| Paper # | LQE2012-116 | |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-88 CPM2012-145 LQE2012-116 Link to ES Tech. Rep. Archives: ED2012-88 CPM2012-145 LQE2012-116 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2012-11-29 - 2012-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2012-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices |
| Sub Title (in English) | |
| Keyword(1) | InP nanowire |
| Keyword(2) | wurtzite crystal |
| Keyword(3) | radial InP/InAsP quantum well |
| Keyword(4) | |
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| 1st Author's Name | Kenichi Kawaguchi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 2nd Author's Name | Yoshiaki Nakata |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 3rd Author's Name | Mitsuru Ekawa |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 4th Author's Name | Tsuyoshi Yamamoto |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 5th Author's Name | Yasuhiko Arakawa |
| 5th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2012-11-30 15:35:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2012-88, CPM2012-145, LQE2012-116 |
| Volume (vol) | vol.112 |
| Number (no) | no.327(ED), no.328(CPM), no.329(LQE) |
| Page | pp.109-112 |
| #Pages | 4 |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) |
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