Paper Abstract and Keywords |
Presentation |
2012-11-30 13:40
Approaches for improving efficiency of AlGaN-based deep-UV LEDs Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) ED2012-84 CPM2012-141 LQE2012-112 Link to ES Tech. Rep. Archives: ED2012-84 CPM2012-141 LQE2012-112 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increasing efficiency of AlGaN based deep-ultraviolet (DUV) LEDs, because of improving internal quantum efficiency (IQE) due to reduced threading-dislocation density (TDD), and light-extraction efficiency (LEE). In this study, we demonstrated the fabrication of connected-pillar AlN structure buffer on patterned-sapphire substrates (PSS) by using an ‘NH3 pulsed flow multi-layer growth’ method and an epitaxial lateral overgrowth (ELO). We obtained output power of 5.5 mW from 265 nm AlGaN-based DUV-LED fabricated on connected-pillar AlN buffer on PSS under room temperature CW operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
DUV-LED / MOCVD / AlN / AlGaN / Connected pillar / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 329, LQE2012-112, pp. 87-92, Nov. 2012. |
Paper # |
LQE2012-112 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-84 CPM2012-141 LQE2012-112 Link to ES Tech. Rep. Archives: ED2012-84 CPM2012-141 LQE2012-112 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2012-11-29 - 2012-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride and Compound Semiconductor Devices |
Paper Information |
Registration To |
LQE |
Conference Code |
2012-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Approaches for improving efficiency of AlGaN-based deep-UV LEDs |
Sub Title (in English) |
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Keyword(1) |
DUV-LED |
Keyword(2) |
MOCVD |
Keyword(3) |
AlN |
Keyword(4) |
AlGaN |
Keyword(5) |
Connected pillar |
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1st Author's Name |
Yuji Tomita |
1st Author's Affiliation |
Saitama University (Saitama Univ.) |
2nd Author's Name |
Hideki Hirayama |
2nd Author's Affiliation |
RIKEN (RIKEN) |
3rd Author's Name |
Sachie Fujikawa |
3rd Author's Affiliation |
RIKEN (RIKEN) |
4th Author's Name |
Katsuya Mizusawa |
4th Author's Affiliation |
Saitama University (Saitama Univ.) |
5th Author's Name |
Siro Toyoda |
5th Author's Affiliation |
Saitama University (Saitama Univ.) |
6th Author's Name |
Norihiko Kamata |
6th Author's Affiliation |
Saitama University (Saitama Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-11-30 13:40:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2012-84, CPM2012-141, LQE2012-112 |
Volume (vol) |
vol.112 |
Number (no) |
no.327(ED), no.328(CPM), no.329(LQE) |
Page |
pp.87-92 |
#Pages |
6 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
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