Paper Abstract and Keywords |
Presentation |
2012-11-30 14:05
Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113 Link to ES Tech. Rep. Archives: ED2012-85 CPM2012-142 LQE2012-113 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 nm upon changing the AlN molar fraction x. Research on the application of this characteristic to deep-ultraviolet (UV) light-emitting diodes (LEDs) is being actively carried out. However, the emission efficiency of LEDs with wavelengths of less than 280 nm is rather low, partly due to the high resistivity of p-type AlGaN and the low quality of the AlGaN template. In this work, we performed the growth of Si-doped AlGaN multiple quantum wells (MQWs) on AlN/sapphire templates by low-pressure MOVPE (LP-MOVPE), and also studied optical properties as deep-UV-light-source by electron beam excitation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
LP-MOVPE / Si-doped AlGaN / Multiple Quantum Wells / UV-light-source / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 329, LQE2012-113, pp. 93-96, Nov. 2012. |
Paper # |
LQE2012-113 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-85 CPM2012-142 LQE2012-113 Link to ES Tech. Rep. Archives: ED2012-85 CPM2012-142 LQE2012-113 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2012-11-29 - 2012-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride and Compound Semiconductor Devices |
Paper Information |
Registration To |
LQE |
Conference Code |
2012-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source |
Sub Title (in English) |
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Keyword(1) |
LP-MOVPE |
Keyword(2) |
Si-doped AlGaN |
Keyword(3) |
Multiple Quantum Wells |
Keyword(4) |
UV-light-source |
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1st Author's Name |
Shunsuke Ochiai |
1st Author's Affiliation |
Mie University (Mie Univ.) |
2nd Author's Name |
Mayuna Takagi |
2nd Author's Affiliation |
Mie University (Mie Univ.) |
3rd Author's Name |
Fumitsugu Fukuyo |
3rd Author's Affiliation |
Mie University /HAMAMATSU PHOTONICS K.K. (Mie Univ. /HAMAMATSU PHOTONICS) |
4th Author's Name |
Hideto Miyake |
4th Author's Affiliation |
Mie University (Mie Univ.) |
5th Author's Name |
Kazumasa Hiramatsu |
5th Author's Affiliation |
Mie University (Mie Univ.) |
6th Author's Name |
Yuji Kobayashi |
6th Author's Affiliation |
HAMAMATSU PHOTONICS K.K. (HAMAMATSU PHOTONICS) |
7th Author's Name |
Harumasa Yoshida |
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HAMAMATSU PHOTONICS K.K. (HAMAMATSU PHOTONICS) |
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Speaker |
Author-1 |
Date Time |
2012-11-30 14:05:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2012-85, CPM2012-142, LQE2012-113 |
Volume (vol) |
vol.112 |
Number (no) |
no.327(ED), no.328(CPM), no.329(LQE) |
Page |
pp.93-96 |
#Pages |
4 |
Date of Issue |
2012-11-22 (ED, CPM, LQE) |
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