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Paper Abstract and Keywords
Presentation 2012-11-30 14:05
Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source
Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS) ED2012-85 CPM2012-142 LQE2012-113 Link to ES Tech. Rep. Archives: ED2012-85 CPM2012-142 LQE2012-113
Abstract (in Japanese) (See Japanese page) 
(in English) AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 nm upon changing the AlN molar fraction x. Research on the application of this characteristic to deep-ultraviolet (UV) light-emitting diodes (LEDs) is being actively carried out. However, the emission efficiency of LEDs with wavelengths of less than 280 nm is rather low, partly due to the high resistivity of p-type AlGaN and the low quality of the AlGaN template. In this work, we performed the growth of Si-doped AlGaN multiple quantum wells (MQWs) on AlN/sapphire templates by low-pressure MOVPE (LP-MOVPE), and also studied optical properties as deep-UV-light-source by electron beam excitation.
Keyword (in Japanese) (See Japanese page) 
(in English) LP-MOVPE / Si-doped AlGaN / Multiple Quantum Wells / UV-light-source / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-113, pp. 93-96, Nov. 2012.
Paper # LQE2012-113 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2012-85 CPM2012-142 LQE2012-113 Link to ES Tech. Rep. Archives: ED2012-85 CPM2012-142 LQE2012-113

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source 
Sub Title (in English)  
Keyword(1) LP-MOVPE  
Keyword(2) Si-doped AlGaN  
Keyword(3) Multiple Quantum Wells  
Keyword(4) UV-light-source  
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1st Author's Name Shunsuke Ochiai  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Mayuna Takagi  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Fumitsugu Fukuyo  
3rd Author's Affiliation Mie University /HAMAMATSU PHOTONICS K.K. (Mie Univ. /HAMAMATSU PHOTONICS)
4th Author's Name Hideto Miyake  
4th Author's Affiliation Mie University (Mie Univ.)
5th Author's Name Kazumasa Hiramatsu  
5th Author's Affiliation Mie University (Mie Univ.)
6th Author's Name Yuji Kobayashi  
6th Author's Affiliation HAMAMATSU PHOTONICS K.K. (HAMAMATSU PHOTONICS)
7th Author's Name Harumasa Yoshida  
7th Author's Affiliation HAMAMATSU PHOTONICS K.K. (HAMAMATSU PHOTONICS)
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Speaker Author-1 
Date Time 2012-11-30 14:05:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-85, CPM2012-142, LQE2012-113 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.93-96 
#Pages
Date of Issue 2012-11-22 (ED, CPM, LQE) 


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