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| Presentation | 2012-11-29 15:50 Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.)  ED2012-75 CPM2012-132 LQE2012-103 Link to ES Tech. Rep. Archives: ED2012-75 CPM2012-132 LQE2012-103 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) for power applications. To reduce the Vth shift, we clarified the origins of the electron traps which cause the Vth shift by focusing on atomic layer deposited (ALD)-Al2O3 and GaN/Al2O3 interface. Furthermore, the effects of ALD oxidant sources and post deposition annealing (PDA) on the Vth shift were investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the ALD-Al2O3 and the GaN/Al2O3 interface. We clarified that the origins of the electron traps were Al(OH)x in the ALD-Al2O3 and the GaN oxidation layer at the GaN/Al2O3 interface. Moreover, it was revealed that Al(OH)x could be reduced by high temperature PDA, and the GaN oxidation layer could be reduced by using H2O vapor oxidant source. From these methods, we successfully reduced the Vth shift of insulated-gate GaN-HEMT. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Insulated-gate GaN-HEMT / ALD-Al2O3 / Threshold voltage shift / Electron trap / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 329, LQE2012-103, pp. 41-44, Nov. 2012. | |
| Paper # | LQE2012-103 | |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-75 CPM2012-132 LQE2012-103 Link to ES Tech. Rep. Archives: ED2012-75 CPM2012-132 LQE2012-103 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2012-11-29 - 2012-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2012-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films |
| Sub Title (in English) | |
| Keyword(1) | Insulated-gate GaN-HEMT |
| Keyword(2) | ALD-Al2O3 |
| Keyword(3) | Threshold voltage shift |
| Keyword(4) | Electron trap |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shiro Ozaki |
| 1st Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 2nd Author's Name | Toshihiro Ohki |
| 2nd Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 3rd Author's Name | Masahito Kanamura |
| 3rd Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 4th Author's Name | Tadahiro Imada |
| 4th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 5th Author's Name | Norikazu Nakamura |
| 5th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 6th Author's Name | Naoya Okamoto |
| 6th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 7th Author's Name | Toyoo Miyajima |
| 7th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
| 8th Author's Name | Toshihide Kikkawa |
| 8th Author's Affiliation | Fujitsu Laboratories Limited (Fujitsu Laboratories Ltd.) |
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| Speaker | Author-1 |
| Date Time | 2012-11-29 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2012-75, CPM2012-132, LQE2012-103 |
| Volume (vol) | vol.112 |
| Number (no) | no.327(ED), no.328(CPM), no.329(LQE) |
| Page | pp.41-44 |
| #Pages | 4 |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) |
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