| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2012-11-29 14:45 Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech)  ED2012-73 CPM2012-130 LQE2012-101 Link to ES Tech. Rep. Archives: ED2012-73 CPM2012-130 LQE2012-101 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We focused Al2O3 as an insulator in MIS structures. MIS-diodes were fabricated with Al2O3 deposited by ALD on GaN at 200 ℃,250 ℃ and 300 ℃, and their electrical characteristics were evaluated. H2O or O3 or both of them were used as an oxygen precursor. The leakage current was suppressed by Al2O3 deposition, and the smallest threshold voltage shift was observed with the Al2O3 deposited by O3 at 300 ℃ when using H2O or O3. Further the oxide charge in Al2O3 deposited by both H2O and O3 alternately was smaller than that in Al2O3 deposited by H2O or O3. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / MIS-diodes / ALD / insulator / interface / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 327, ED2012-73, pp. 33-36, Nov. 2012. | |
| Paper # | ED2012-73 | |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-73 CPM2012-130 LQE2012-101 Link to ES Tech. Rep. Archives: ED2012-73 CPM2012-130 LQE2012-101 |
|
| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2012-11-29 - 2012-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS-diodes |
| Keyword(3) | ALD |
| Keyword(4) | insulator |
| Keyword(5) | interface |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuhiro Iwata |
| 1st Author's Affiliation | Nagoya Institute of Technology (NITech) |
| 2nd Author's Name | Toshiharu Kubo |
| 2nd Author's Affiliation | Nagoya Institute of Technology (NITech) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology (NITech) |
| 4th Author's Name | |
| 4th Author's Affiliation | () |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2012-11-29 14:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-73, CPM2012-130, LQE2012-101 |
| Volume (vol) | vol.112 |
| Number (no) | no.327(ED), no.328(CPM), no.329(LQE) |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) |
[Return to Top Page]