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Paper Abstract and Keywords
Presentation 2012-11-29 11:05
Applicationo of III-V nitride films to photovoltaic device
Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS) ED2012-67 CPM2012-124 LQE2012-95 Link to ES Tech. Rep. Archives: ED2012-67 CPM2012-124 LQE2012-95
Abstract (in Japanese) (See Japanese page) 
(in English) We have proposed the solar cell system composing III-V nitride film with wider band gap. III-V nitride solar cell is mechanically stacked with transparent glue on conventional InGaP solar cell, and photovoltaic power is independently obtained through 4 terminals, which would increase conversion efficiency. Current matching, which is crucial in tandem –type solar cell, is not taken into account in this structure. Defects in InGaN film with thickness of 0.3m for applying to solar cell were characterized by using deep level optical spectroscopy. Ga vacancy and/or its complex with oxygen impurities must be enhanced by alloying InN to GaN. Conversion efficiency of p-i-n III-V nitride solar cell was improved by inserting AlN layer with ~2nm of thickness grown at 800oC at the interface between p- and i- layers. Dislocation and point defects must be terminated by the AlN thin layer, which could improve the structure at p-i interface.
Keyword (in Japanese) (See Japanese page) 
(in English) III-V nitride / Solar cell / point defect / DLOS / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 328, CPM2012-124, pp. 9-12, Nov. 2012.
Paper # CPM2012-124 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2012-67 CPM2012-124 LQE2012-95 Link to ES Tech. Rep. Archives: ED2012-67 CPM2012-124 LQE2012-95

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To CPM 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Applicationo of III-V nitride films to photovoltaic device 
Sub Title (in English)  
Keyword(1) III-V nitride  
Keyword(2) Solar cell  
Keyword(3) point defect  
Keyword(4) DLOS  
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1st Author's Name Masatomo Sumiya  
1st Author's Affiliation National Institute for Materials Science (NIMS)
2nd Author's Name Liwen Sang  
2nd Author's Affiliation National Institute for Materials Science (NIMS)
3rd Author's Name Mickael Lozac'h  
3rd Author's Affiliation National Institute for Materials Science (NIMS)
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Speaker Author-1 
Date Time 2012-11-29 11:05:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2012-67, CPM2012-124, LQE2012-95 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.9-12 
#Pages
Date of Issue 2012-11-22 (ED, CPM, LQE) 


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