| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2012-11-29 10:25 Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT)  ED2012-66 CPM2012-123 LQE2012-94 Link to ES Tech. Rep. Archives: ED2012-66 CPM2012-123 LQE2012-94 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-power electronics. These GaN-based device structures can be grown on sapphire, silicon carbide, and silicon substrate, but not on large, flexible, and affordable substrates, such as polycrystalline or amorphous substrates. Several techniques, including laser lift-off and chemical lift-off, have been studied for transferring the GaN-based structures from the sapphire substrates to other substrates, but those methods still have several disadvantages. Here we demonstrate that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of GaN-based device structure onto foreign substrates [1]. A flat single-crystal wurtzite GaN layer can be grown on AlN or AlGaN layer on h-BN grown on a sapphire substrate. AlGaN/GaN heterostructures and InGaN/GaN multiple-quantum-well (MQW) structures grown on h-BN-buffered sapphire substrates, ranging in area from five millimeters square to two centimeters square, are mechanically released from the host substrates and successfully transferred onto other substrates. In electroluminescence (EL) spectra of transferred light-emitting diode (LED) and conventional LED, the intensities of the EL intensities from the transferred LED were comparable to or higher than the intensities from the conventional LED on low-temperature AlN buffer layer, indicating that the MQW preserves its original quality after the transfer. [1] Y. Kobayashi, K. Kumakura, T. Akasaka, and T. Makimoto, Nature, Vol. 484, pp.223-227, 2012. |
|
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Nitride Semiconductors / Hexagonal Boron Nitride / Mechanical Transfer / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 329, LQE2012-94, pp. 7-7, Nov. 2012. | |
| Paper # | LQE2012-94 | |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-66 CPM2012-123 LQE2012-94 Link to ES Tech. Rep. Archives: ED2012-66 CPM2012-123 LQE2012-94 |
|
| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2012-11-29 - 2012-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Ｎｉｔｒide and Compound Semiconductor Devices |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2012-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Layered boron nitride as a release layer for mechanical transfer of GaN-based devices |
| Sub Title (in English) | |
| Keyword(1) | Nitride Semiconductors |
| Keyword(2) | Hexagonal Boron Nitride |
| Keyword(3) | Mechanical Transfer |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuyuki Kobayashi |
| 1st Author's Affiliation | NTT Basic Research Laboratories (NTT) |
| 2nd Author's Name | Kazuhide Kumakura |
| 2nd Author's Affiliation | NTT Basic Research Laboratories (NTT) |
| 3rd Author's Name | Tetsuya Akasaka |
| 3rd Author's Affiliation | NTT Basic Research Laboratories (NTT) |
| 4th Author's Name | Hideki Yamamoto |
| 4th Author's Affiliation | NTT Basic Research Laboratories (NTT) |
| 5th Author's Name | Toshiki Makimoto |
| 5th Author's Affiliation | NTT Basic Research Laboratories (NTT) |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2012-11-29 10:25:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2012-66, CPM2012-123, LQE2012-94 |
| Volume (vol) | vol.112 |
| Number (no) | no.327(ED), no.328(CPM), no.329(LQE) |
| Page | p.7 |
| #Pages | 1 |
| Date of Issue | 2012-11-22 (ED, CPM, LQE) |
[Return to Top Page]