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Paper Abstract and Keywords
Presentation 2012-11-19 15:50
Interface formation of ferroelectric ultra-thin film on p- and n-type semiconductor for charge separation improvement
Takuya Ohsugi, Yasuko Koshiba, Masahiro Misaki, Kenji Ishida, Yasukiyo Ueda (Kobe Univ.) OME2012-72 Link to ES Tech. Rep. Archives: OME2012-72
Abstract (in Japanese) (See Japanese page) 
(in English) The structural and electrical characteristics of CuPc/VDF oligomer/C60 were investigated. The switching current for CuPc/VDF oligomer/C60 exhibits double peaks in negative voltage. The molecular orientation of VDF oligomer film deposited on Al, C60 and CuPc, has been depended on film thickness of VDF oligomer. Regardless of substrates, the VDF oligomer grows with their molecular axes perpendicular to the substrate in the initial stage by the conventional method that forms the film with parallel orientation. In thickness of 20nm or more, the VDF oligomer molecules were parallel on normal oriented VDF oligomer films.
Keyword (in Japanese) (See Japanese page) 
(in English) ferroelectric / semiconductor / interface / ultra-thin film / orientation control / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 304, OME2012-72, pp. 55-59, Nov. 2012.
Paper # OME2012-72 
Date of Issue 2012-11-12 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2012-72 Link to ES Tech. Rep. Archives: OME2012-72

Conference Information
Committee OME  
Conference Date 2012-11-19 - 2012-11-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Room 302, Nakanoshima Ctr., Osaka Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic Materials, etc. 
Paper Information
Registration To OME 
Conference Code 2012-11-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface formation of ferroelectric ultra-thin film on p- and n-type semiconductor for charge separation improvement 
Sub Title (in English)  
Keyword(1) ferroelectric  
Keyword(2) semiconductor  
Keyword(3) interface  
Keyword(4) ultra-thin film  
Keyword(5) orientation control  
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1st Author's Name Takuya Ohsugi  
1st Author's Affiliation Kobe University (Kobe Univ.)
2nd Author's Name Yasuko Koshiba  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Masahiro Misaki  
3rd Author's Affiliation Kobe University (Kobe Univ.)
4th Author's Name Kenji Ishida  
4th Author's Affiliation Kobe University (Kobe Univ.)
5th Author's Name Yasukiyo Ueda  
5th Author's Affiliation Kobe University (Kobe Univ.)
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Speaker Author-1 
Date Time 2012-11-19 15:50:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2012-72 
Volume (vol) vol.112 
Number (no) no.304 
Page pp.55-59 
#Pages
Date of Issue 2012-11-12 (OME) 


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