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Paper Abstract and Keywords
Presentation 2012-11-16 10:00
An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs
Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT) Link to ES Tech. Rep. Archives: SDM2012-104
Abstract (in Japanese) (See Japanese page) 
(in English) An effective mobility model used in the MASTAR program, which has been used to predict the device characteristics in the ITRS, is investigated. The model has been estimated by using a Poisson / Schrödinger model. For low standby power nMOSFETs with 18 - 28 nm gate lengths, MASTAR underestimates the effective mobility. It is found that the approximation of the surface potential and the applied voltage to the effective oxide leads to the disagreement.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / carrier mobility model / inversion charge confinement / Poisson equation / Schrödinger equation / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 290, SDM2012-104, pp. 25-30, Nov. 2012.
Paper # SDM2012-104 
Date of Issue 2012-11-08 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee SDM  
Conference Date 2012-11-15 - 2012-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2012-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) carrier mobility model  
Keyword(3) inversion charge confinement  
Keyword(4) Poisson equation  
Keyword(5) Schrödinger equation  
1st Author's Name Masahiro Yamamoto  
1st Author's Affiliation Kyoto Institute of Technology (KIT)
2nd Author's Name Akira Hiroki  
2nd Author's Affiliation Kyoto Institute of Technology (KIT)
3rd Author's Name Jong Chul Yoon  
3rd Author's Affiliation Kyoto Institute of Technology (KIT)
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Date Time 2012-11-16 10:00:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2012-104 
Volume (vol) IEICE-112 
Number (no) no.290 
Page pp.25-30 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2012-11-08 

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