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| Presentation | 2012-11-16 10:00 An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs Masahiro Yamamoto, Akira Hiroki, Jong Chul Yoon (KIT)  SDM2012-104 Link to ES Tech. Rep. Archives: SDM2012-104 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | An effective mobility model used in the MASTAR program, which has been used to predict the device characteristics in the ITRS, is investigated. The model has been estimated by using a Poisson / Schrödinger model. For low standby power nMOSFETs with 18 - 28 nm gate lengths, MASTAR underestimates the effective mobility. It is found that the approximation of the surface potential and the applied voltage to the effective oxide leads to the disagreement. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOSFET / carrier mobility model / inversion charge confinement / Poisson equation / Schrödinger equation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 290, SDM2012-104, pp. 25-30, Nov. 2012. | |
| Paper # | SDM2012-104 | |
| Date of Issue | 2012-11-08 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-104 Link to ES Tech. Rep. Archives: SDM2012-104 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2012-11-15 - 2012-11-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2012-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An Estimation of the Carrier Mobility Model Influenced by Inversion Charge Confinement for Sub-20nm MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | carrier mobility model |
| Keyword(3) | inversion charge confinement |
| Keyword(4) | Poisson equation |
| Keyword(5) | Schrödinger equation |
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| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masahiro Yamamoto |
| 1st Author's Affiliation | Kyoto Institute of Technology (KIT) |
| 2nd Author's Name | Akira Hiroki |
| 2nd Author's Affiliation | Kyoto Institute of Technology (KIT) |
| 3rd Author's Name | Jong Chul Yoon |
| 3rd Author's Affiliation | Kyoto Institute of Technology (KIT) |
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| Speaker | Author-1 |
| Date Time | 2012-11-16 10:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2012-104 |
| Volume (vol) | vol.112 |
| Number (no) | no.290 |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2012-11-08 (SDM) |
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