Paper Abstract and Keywords |
Presentation |
2012-11-16 13:55
Analysis of flexible OFET characteristics by using EFI-SHG
-- the effect of bending -- Yohei Abe, Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) OME2012-57 OPE2012-129 Link to ES Tech. Rep. Archives: OME2012-57 OPE2012-129 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We studied the effect of bending on flexible organic field-effect transistors (active layer: TIPS pentacene, gate-insulator: polyimide) in terms of transfer characteristics. Results showed that the effective carrier mobility increased ~30 % with 1.5 % mechanical strain (compressive stress), whereas it decreased ~15 % with -1.5 % strain (tensile stress). Theoretical analysis based on the Maxwell-Wagner effect was carried out, and suggested that both carrier mobility and carrier density in the OFET channel were modulated due to the mechanical strains. The microscopic EFISHG image showed the carrier transport governed by grains of tips-pentacene. The microscopic EFISHG observation is a powerful tool to investigate carrier processes in flexible OFETs subjected to mechanical strains. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
flexible field-effect transistor / Maxwell-Wagner effect / EFISHG, carrier mechanism / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 295, OME2012-57, pp. 13-18, Nov. 2012. |
Paper # |
OME2012-57 |
Date of Issue |
2012-11-09 (OME, OPE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OME2012-57 OPE2012-129 Link to ES Tech. Rep. Archives: OME2012-57 OPE2012-129 |
Conference Information |
Committee |
OME OPE |
Conference Date |
2012-11-16 - 2012-11-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
OME |
Conference Code |
2012-11-OME-OPE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Analysis of flexible OFET characteristics by using EFI-SHG |
Sub Title (in English) |
the effect of bending |
Keyword(1) |
flexible field-effect transistor |
Keyword(2) |
Maxwell-Wagner effect |
Keyword(3) |
EFISHG, carrier mechanism |
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1st Author's Name |
Yohei Abe |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
2nd Author's Name |
Dai Taguchi |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
3rd Author's Name |
Takaaki Manaka |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
4th Author's Name |
Mitsumasa Iwamoto |
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Tokyo Institute of Technology (Tokyo Tech) |
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Speaker |
Author-1 |
Date Time |
2012-11-16 13:55:00 |
Presentation Time |
25 minutes |
Registration for |
OME |
Paper # |
OME2012-57, OPE2012-129 |
Volume (vol) |
vol.112 |
Number (no) |
no.295(OME), no.296(OPE) |
Page |
pp.13-18 |
#Pages |
6 |
Date of Issue |
2012-11-09 (OME, OPE) |
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