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| Presentation | 2012-11-16 11:15 Impact of Discrete Dopant in Characteristics of Nanowire Transistors -- KMC and NEGF Study -- Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.)  SDM2012-107 Link to ES Tech. Rep. Archives: SDM2012-107 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Impacts of discrete dopant in source and drain extensions on characteristics of silicon nanowire transistors have been numerically studied. Kinetic Monte Carlo simulation is performed for generating distribution of active dopant atoms. Current-voltage characteristics are then calculated within a non-equilibrium Green's function method. For silicon nanowire transistors with $3\,\mathrm{nm} \times 3\,\mathrm{nm}$ cross-section and $10 \,\mathrm{nm}$ gate-length the average drain current, $\langle I_\mathrm{d}\rangle$, is found to be $\sim 20 \, \%$ reduced compared to the uniform distribution case. The standard deviation is found to be $\sigma I_\mathrm{d} \approx 0.2 \langle I_\mathrm{d}\rangle$. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | nanowire / NEGF / KMC / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 290, SDM2012-107, pp. 43-46, Nov. 2012. | |
| Paper # | SDM2012-107 | |
| Date of Issue | 2012-11-08 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2012-107 Link to ES Tech. Rep. Archives: SDM2012-107 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2012-11-15 - 2012-11-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2012-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Discrete Dopant in Characteristics of Nanowire Transistors |
| Sub Title (in English) | KMC and NEGF Study |
| Keyword(1) | nanowire |
| Keyword(2) | NEGF |
| Keyword(3) | KMC |
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| 1st Author's Name | Nobuya Mori |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Masashi Uematsu |
| 2nd Author's Affiliation | Keio University (Keio Univ.) |
| 3rd Author's Name | Hideki Minari |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Gennady Mil'nikov |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Kohei M. Itoh |
| 5th Author's Affiliation | Keio University (Keio Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-11-16 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2012-107 |
| Volume (vol) | vol.112 |
| Number (no) | no.290 |
| Page | pp.43-46 |
| #Pages | 4 |
| Date of Issue | 2012-11-08 (SDM) |
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