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Paper Abstract and Keywords
Presentation 2012-10-26 13:00
Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator
Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-95 Link to ES Tech. Rep. Archives: SDM2012-95
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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(in English) / / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 263, SDM2012-95, pp. 33-36, Oct. 2012.
Paper # SDM2012-95 
Date of Issue 2012-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-10-25 - 2012-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2012-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator 
Sub Title (in English)  
1st Author's Name Min Liao  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Hiroshi Ishiwara  
2nd Author's Affiliation Konkuk University (Konkuk Univ.)
3rd Author's Name Shun-ichiro Ohmi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Date Time 2012-10-26 13:00:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2012-95 
Volume (vol) IEICE-112 
Number (no) no.263 
Page pp.33-36 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2012-10-18 

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