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Paper Abstract and Keywords
Presentation 2012-10-25 16:35
Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching
Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)   エレソ技報アーカイブはこちら
Abstract (in Japanese) (See Japanese page) 
(in English) Si substrate damage in the source/drain extension regions during plasma etching is a serious issue that causes degradation in MOSFET performance. In this paper, we report a qualitative analysis of carrier-trapping defect sites and identification of their distribution, using temperature-controlled photoreflectance spectroscopy. Damaged layers caused by He and Ar plasmas are compared and discussed. Since the damaged layer structure and defect distribution strongly affects the removability of the damage, processes should be carefully designed.
Keyword (in Japanese) (See Japanese page) 
(in English) plasma etching / plasma-induced damage / defects / photoreflectance spectroscopy / / / /  
Reference Info. IEICE Tech. Rep.
Paper #  
Date of Issue  
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Conference Information
Committee SDM  
Conference Date 2012-10-25 - 2012-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2012-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Plasma-Induced Si Substrate Damage using Temperature-Controlled Photoreflectance Spectroscopy and Defect Distribution Profiling using Wet Etching 
Sub Title (in English)  
Keyword(1) plasma etching  
Keyword(2) plasma-induced damage  
Keyword(3) defects  
Keyword(4) photoreflectance spectroscopy  
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1st Author's Name Asahiko Matsuda  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Yoshinori Nakakubo  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Yoshinori Takao  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Koji Eriguchi  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Kouichi Ono  
5th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker
Date Time 2012-10-25 16:35:00 
Presentation Time 25 
Registration for SDM 
Paper #  
Volume (vol) IEICE-112 
Number (no) no.263 
Page  
#Pages IEICE- 
Date of Issue  


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