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Paper Abstract and Keywords
Presentation 2012-10-25 16:10
Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction
Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91 Link to ES Tech. Rep. Archives: SDM2012-91
Abstract (in Japanese) (See Japanese page) 
(in English) Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflectometry (XRR) and grazing incident X-ray diffraction (GIXD) measurements. The structure of thermally grown SiO2 has been considered to be amorphous, however sharp diffraction peaks were observed in the films formed using both oxygen molecules and radicals. These peaks had preferential orientation and their positions mostly depended on oxidizing species. In the case of oxygen molecules, diffraction peak’s tended to reflect cristobalite structure. In addition, densities of these films were higher than that of amorphous SiO2 structure and changed as a function of the depth. Therefore, it was considered that the crystalline structure in SiO2 gave influence not only on the film density but also on the electrical/optical properties.
Keyword (in Japanese) (See Japanese page) 
(in English) Grazing incident X-ray diffraction / Silicon dioxide / Synchrotron radiation / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 263, SDM2012-91, pp. 11-14, Oct. 2012.
Paper # SDM2012-91 
Date of Issue 2012-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-10-25 - 2012-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2012-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction 
Sub Title (in English)  
Keyword(1) Grazing incident X-ray diffraction  
Keyword(2) Silicon dioxide  
Keyword(3) Synchrotron radiation  
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1st Author's Name Kohki Nagata  
1st Author's Affiliation Meiji University (Meiji Univ.)
2nd Author's Name Takuya Yamaguchi  
2nd Author's Affiliation Meiji University (Meiji Univ.)
3rd Author's Name Atsushi Ogura  
3rd Author's Affiliation Meiji University (Meiji Univ.)
4th Author's Name Tomoyuki Koganezawa  
4th Author's Affiliation JASRI (JASRI)
5th Author's Name Ichiro Hirosawa  
5th Author's Affiliation JASRI (JASRI)
6th Author's Name Tomoyuki Suwa  
6th Author's Affiliation NICHe (NICHe)
7th Author's Name Akinobu Teramoto  
7th Author's Affiliation NICHe (NICHe)
8th Author's Name Takeo Hattori  
8th Author's Affiliation NICHe (NICHe)
9th Author's Name Tadahiro Ohmi  
9th Author's Affiliation NICHe (NICHe)
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Speaker
Date Time 2012-10-25 16:10:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2012-91 
Volume (vol) IEICE-112 
Number (no) no.263 
Page pp.11-14 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2012-10-18 


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