Paper Abstract and Keywords |
Presentation |
2012-10-18 17:05
Preparation of nitride capping layers for an improvement of magnetic properties in a CoFeB/MgO-magnetic tunnel junction Atsushi Sugihara, Soichiro Osaki, Ryoichi Nakatani (Osaka Univ.) MR2012-24 Link to ES Tech. Rep. Archives: MR2012-24 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Properties of a CoFeB/MgO-magnetic tunnel junction are possibly improved by suppression of diffusion from a capping layer to a CoFeB layer. To suppress the diffusion, while a use of a capping layer material with high thermal stability is effective, low resistivity, well-matching crystallographic orientation with bcc-CoFeB(001) or nano-crystalline structure and boron scavenging behavior for adjacent CoFeB layer during annealing process are also needed. In this study, we focused on Ta-N and Ti-N, and characterized their microstructure and magnetic properties discussing their potential as a capping material of a CoFeB/MgO-magnetic tunnel junction. The results suggested that TiN was superior to Ta as a capping material of a CoFeB/MgO-magnetic tunnel junction. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ta / Ta-N / Ti-N / CoFeB / Magnetic Tunnel Junction / CoFeB/MgO-Magnetic Tunnel Junction / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, Oct. 2012. |
Paper # |
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Date of Issue |
2012-10-11 (MR) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
MR2012-24 Link to ES Tech. Rep. Archives: MR2012-24 |
Conference Information |
Committee |
MRIS ITE-MMS |
Conference Date |
2012-10-18 - 2012-10-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
AIT |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Recording head, Spintronics, etc. |
Paper Information |
Registration To |
MRIS |
Conference Code |
2012-10-MR-MMS |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Preparation of nitride capping layers for an improvement of magnetic properties in a CoFeB/MgO-magnetic tunnel junction |
Sub Title (in English) |
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Keyword(1) |
Ta |
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Ta-N |
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Ti-N |
Keyword(4) |
CoFeB |
Keyword(5) |
Magnetic Tunnel Junction |
Keyword(6) |
CoFeB/MgO-Magnetic Tunnel Junction |
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1st Author's Name |
Atsushi Sugihara |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Soichiro Osaki |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Ryoichi Nakatani |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-10-18 17:05:00 |
Presentation Time |
25 minutes |
Registration for |
MRIS |
Paper # |
MR2012-24 |
Volume (vol) |
vol.112 |
Number (no) |
no.249 |
Page |
pp.37-42 |
#Pages |
6 |
Date of Issue |
2012-10-11 (MR) |
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