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| Presentation | 2012-10-17 13:20 Electrical property of CTAB/Si hetero-structures Yoko Deguchi, Mari Taguchi, Atsumi Ozawa, Hajime Imai (Japan Women's Univ.)  OME2012-46 Link to ES Tech. Rep. Archives: OME2012-46 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have used a surfactant material of Cetyl Trimethyl Ammonium Bromide: CTAB as an organic material. We have already evaluated the electrical and optical properties of this material, such as the resistivity, its temperature dependence, and the spectral dependence of the photoconductivity. Furthermore, we made the homo-junction sample of CTAB materials. The I-V characteristics were reported to be very similar to the inorganic p-n homo-junction diode characteristics. We fabricated two different the hetero-structure diodes using p-C16TAB/ n-Si and n-C16TAB/p-Si. We measured I-V characteristics to evaluate the diode performance of them. Moreover, from the I-V characteristics, we estimated the electron affinity of C16TAB. Further, we considered the Fermi-revel of C16TAB using the value of the electron affinity. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Organic material / The hetero-structure diodes / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 244, OME2012-46, pp. 7-10, Oct. 2012. | |
| Paper # | OME2012-46 | |
| Date of Issue | 2012-10-10 (OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2012-46 Link to ES Tech. Rep. Archives: OME2012-46 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2012-10-17 - 2012-10-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | General Aspects of Organic Devices |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2012-10-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical property of CTAB/Si hetero-structures |
| Sub Title (in English) | |
| Keyword(1) | Organic material |
| Keyword(2) | The hetero-structure diodes |
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| 1st Author's Name | Yoko Deguchi |
| 1st Author's Affiliation | Japan Women's University (Japan Women's Univ.) |
| 2nd Author's Name | Mari Taguchi |
| 2nd Author's Affiliation | Japan Women's University (Japan Women's Univ.) |
| 3rd Author's Name | Atsumi Ozawa |
| 3rd Author's Affiliation | Japan Women's University (Japan Women's Univ.) |
| 4th Author's Name | Hajime Imai |
| 4th Author's Affiliation | Japan Women's University (Japan Women's Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-10-17 13:20:00 |
| Presentation Time | 20 minutes |
| Registration for | OME |
| Paper # | OME2012-46 |
| Volume (vol) | vol.112 |
| Number (no) | no.244 |
| Page | pp.7-10 |
| #Pages | 4 |
| Date of Issue | 2012-10-10 (OME) |
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