Paper Abstract and Keywords |
Presentation |
2012-10-12 16:40
Evaluation of memory management schema for Flash SSD Takuma Kouge, Toshiaki Kitamura (Hiroshima City Univ.) CPSY2012-43 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The NAND Flash memory is nonvolatile semiconductor memory used for storage element of SSD.
SSD needs to handle the data between host and NAND Flash memory and handle restrictions on use.
Logical-physical address translation greatly concerns performance and lifetime of SSD.
This is performed by various systems.
Therefore, we made a software simulator of SSD based on NAND Flash memory.
Then, we focus attention on granularity of data which performs logical-physical address translation, and implemented memory management schema of the NAND Flash memory called Replacement BlockFTL, DFTL and BAST.
In this paper, we simulated each control schema with some workload, and evaluated their the performance and lifetime.
By changing the capacity of DRAM buffer, SSD performance improved 31%, and Write Amplification decreased 1.8 point.
We learned SRAM is significant factor for SSD lifetime in random access workload.
In BAST, garbage collection increased about 35,000 times and the performance decrease 9% when the sequential/random threshold value was enlarged. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
NAND Flash memory / Flash Translation Layer / Storage System / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 237, CPSY2012-43, pp. 73-78, Oct. 2012. |
Paper # |
CPSY2012-43 |
Date of Issue |
2012-10-05 (CPSY) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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CPSY2012-43 |
Conference Information |
Committee |
CPSY |
Conference Date |
2012-10-12 - 2012-10-12 |
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(See Japanese page) |
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Paper Information |
Registration To |
CPSY |
Conference Code |
2012-10-CPSY |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of memory management schema for Flash SSD |
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Keyword(1) |
NAND Flash memory |
Keyword(2) |
Flash Translation Layer |
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Storage System |
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1st Author's Name |
Takuma Kouge |
1st Author's Affiliation |
Hiroshima City University (Hiroshima City Univ.) |
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Toshiaki Kitamura |
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Hiroshima City University (Hiroshima City Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-10-12 16:40:00 |
Presentation Time |
20 minutes |
Registration for |
CPSY |
Paper # |
CPSY2012-43 |
Volume (vol) |
vol.112 |
Number (no) |
no.237 |
Page |
pp.73-78 |
#Pages |
6 |
Date of Issue |
2012-10-05 (CPSY) |
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