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Paper Abstract and Keywords
Presentation 2012-08-23 15:15
Current Injecting Operation and Thermal Analysis of GaInAsP/InP Membrane DFB Laser
Kyohei Doi, Takahiko Shindo, Mitsuaki Futami, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) R2012-29 EMD2012-35 CPM2012-60 OPE2012-67 LQE2012-33 Link to ES Tech. Rep. Archives: EMD2012-35 CPM2012-60 OPE2012-67 LQE2012-33
Abstract (in Japanese) (See Japanese page) 
(in English) We have proposed a semiconductor membrane distributed feedback (DFB) laser as a light source for on-chip optical interconnection. The membrane laser consisting of low refractive-index cladding layers is expected to operate with ultra-low threshold current due to its strong optical confinement effect. Up to now, we fabricated the device with the core layer thickness of 450 nm and the cavity length of 300 µm. Although a threshold current of 11 mA was observed under RT-pulsed condition, a RT-continuous-wave (CW) operation wasn’t achieved. Then, we theoretically investigated thermal characteristics of the membrane laser by using simulated temperature distribution. As a result, thermal resistance of the fabricated device was estimated to be 1100 K/W and it was confirmed that the RT-CW operation was very difficult. Next, the thermal characteristics of the membrane laser with the core layer thickness of 150 nm were calculated. Even though the thermal resistance was estimated to be 7000 K/W at a driving current of 1 mA, it was revealed that a RT-CW operation with a light output power required for 10 Gbit/s on-chip optical interconnection can be obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor membrane laser / lateral current injection / strong optical confinement / thermal analysis / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 184, LQE2012-33, pp. 41-46, Aug. 2012.
Paper # LQE2012-33 
Date of Issue 2012-08-16 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF R2012-29 EMD2012-35 CPM2012-60 OPE2012-67 LQE2012-33 Link to ES Tech. Rep. Archives: EMD2012-35 CPM2012-60 OPE2012-67 LQE2012-33

Conference Information
Committee LQE CPM EMD OPE R  
Conference Date 2012-08-23 - 2012-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-08-LQE-CPM-EMD-OPE-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current Injecting Operation and Thermal Analysis of GaInAsP/InP Membrane DFB Laser 
Sub Title (in English)  
Keyword(1) semiconductor membrane laser  
Keyword(2) lateral current injection  
Keyword(3) strong optical confinement  
Keyword(4) thermal analysis  
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1st Author's Name Kyohei Doi  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Takahiko Shindo  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Mitsuaki Futami  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Tomohiro Amemiya  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Nobuhiko Nishiyama  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name Shigehisa Arai  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2012-08-23 15:15:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # R2012-29, EMD2012-35, CPM2012-60, OPE2012-67, LQE2012-33 
Volume (vol) vol.112 
Number (no) no.180(R), no.181(EMD), no.182(CPM), no.183(OPE), no.184(LQE) 
Page pp.41-46 
#Pages
Date of Issue 2012-08-16 (R, EMD, CPM, OPE, LQE) 


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