Paper Abstract and Keywords |
Presentation |
2012-08-09 09:50
Low temperature deposition of SiNx thin films by radical-assisted reaction Mayumi B. Takeyama, Masaru Sato (Kitami Inst. Technol.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (Fujitsu Lab. Ltd.), Atsushi Noya (Kitami Inst. Technol.) CPM2012-45 Link to ES Tech. Rep. Archives: CPM2012-45 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
3-dimensional stacked LSI is of high interest to overcome the issues how to develop the integration density and/or functional value of LSIs without depending upon the scaling down of circuit size. Through-Si-Vias (TSVs) is an essential wiring technology to stack chips or wafers to form 3-D LSIs. In the ‘via last process’, it is exactly ideal, the TSV wiring is formed after performing all LSI processes. In this process, deposition of a SiNx film and a diffusion barrier should be executed at low temperatures below 200°C to avoid the deterioration of circuits already formed; however, this is one of the difficult issues, because a temperature of 300~350°C is required to form SiNx by the conventional processes reported so far. In this study, we propose a new deposition method, in which a sputter-deposited thin Si film is nitrided by assisting radical species. This method is already confirmed to be useful to form thin diffusion barrier of high performance at low temperatures. We can demonstrate the formation of thin SiNx films below 200°C. The intentional incorporation of carbon and oxygen atoms into the film is also available in this method. Subsequent deposition of SiNx and barrier layers at low temperatures is possible by the method, which provides a way to realize ‘via last process’ in TSV technology. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
3-dimensional stacked LSI / Through Si via / SiNx film / low temperature process / radical reaction / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 175, CPM2012-45, pp. 51-54, Aug. 2012. |
Paper # |
CPM2012-45 |
Date of Issue |
2012-08-01 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2012-45 Link to ES Tech. Rep. Archives: CPM2012-45 |
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