Paper Abstract and Keywords |
Presentation |
2012-08-08 15:20
High-Performance Bottom-Contact Organic TFT using Cu Electrode Yuya Utsuno, Tsubasa Sato (Yamagata Univ.), Shinya Oku, Makoto Mizukami (Yamagata Univ. ROEL), Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito (Yamagata Univ./Yamagata Univ. ROEL) CPM2012-38 Link to ES Tech. Rep. Archives: CPM2012-38 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Gold is generally used for the source and drain electrodes of organic thin-film transistors (OTFTs). However, the cost of gold is expensive when considering the practical applications such as flexible displays. Here, we applied copper instead of gold for the bottom-contact (BC) of OTFTs for lowering the fabrication costs. The reduction of contact resistance between source-drain (S-D) electrodes and organic semiconductor is crucial to achieve the high performance for the BC-OTFT. The mobility of the saturation region using semiconductor PBTTT to 0.12 cm2/Vs. PB16TTT semiconductor significantly improved the TFT performance at low operating voltages compared to the Pentacene semiconductor. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Cu electrode / Bottom contact / Organic Thin-Film Transistor / Pentacene / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 175, CPM2012-38, pp. 23-25, Aug. 2012. |
Paper # |
CPM2012-38 |
Date of Issue |
2012-08-01 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2012-38 Link to ES Tech. Rep. Archives: CPM2012-38 |
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