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Paper Abstract and Keywords
Presentation 2012-08-03 13:10
A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process
Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita (Renesas Electronics), Koichiro Ishibashi (Univ. of Electro-Comm.), Kazumasa Yanagisawa (Renesas Electronics) SDM2012-82 ICD2012-50 Link to ES Tech. Rep. Archives: SDM2012-82 ICD2012-50
Abstract (in Japanese) (See Japanese page) 
(in English) A digital low-dropout (LDO) regulator comprising only thin-oxide MOS transistors was developed. The input voltage to the LDO is set to be higher than the nominal overdrive voltage of thin-oxide MOS transistors by applying the proposed overdrive-voltage relaxation scheme. In the LDO, fast transient response can be achieved by applying an output capacitor-less design, which is based on power-MOS features as follows: 1-GHz switching and the small number of levels whereas a wide range of load current (400 $\mu$A - 250 mA) can be covered by applying the proposed power-MOS configuration. The LDO occupies only 0.057 mm$^2$ area using 40-nm CMOS technology, and the measured the transient response time is only 0.07 $\mu$s.
Keyword (in Japanese) (See Japanese page) 
(in English) Low-dropout regulator / digital control / fast-transient response / DVFS / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 170, ICD2012-50, pp. 105-110, Aug. 2012.
Paper # ICD2012-50 
Date of Issue 2012-07-26 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF SDM2012-82 ICD2012-50 Link to ES Tech. Rep. Archives: SDM2012-82 ICD2012-50

Conference Information
Committee ICD SDM  
Conference Date 2012-08-02 - 2012-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Sapporo Center for Gender Equality, Sapporo, Hokkaido 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low-power, low-voltage device and circuit technology 
Paper Information
Registration To ICD 
Conference Code 2012-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Fast-Transient-Response Digital Low-Dropout Regulator Comprising Thin-Oxide MOS Transistors in 40-nm CMOS process 
Sub Title (in English)  
Keyword(1) Low-dropout regulator  
Keyword(2) digital control  
Keyword(3) fast-transient response  
Keyword(4) DVFS  
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1st Author's Name Masafumi Onouchi  
1st Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
2nd Author's Name Kazuo Otsuga  
2nd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
3rd Author's Name Yasuto Igarashi  
3rd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
4th Author's Name Toyohito Ikeya  
4th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
5th Author's Name Sadayuki Morita  
5th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
6th Author's Name Koichiro Ishibashi  
6th Author's Affiliation The University of Electro-Communications (Univ. of Electro-Comm.)
7th Author's Name Kazumasa Yanagisawa  
7th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
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Speaker
Date Time 2012-08-03 13:10:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-SDM2012-82,IEICE-ICD2012-50 
Volume (vol) IEICE-112 
Number (no) no.169(SDM), no.170(ICD) 
Page pp.105-110 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2012-07-26,IEICE-ICD-2012-07-26 


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