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Paper Abstract and Keywords
Presentation 2012-08-02 10:00
Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique
Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33 Link to ES Tech. Rep. Archives: SDM2012-65 ICD2012-33
Abstract (in Japanese) (See Japanese page) 
(in English) The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM TEG array. It is shown that the stability of unbalance cells is automatically improved by merely applying stress voltage to VDD terminal. The mechanism of the phenomena is also analyzed by measuring VTH of all transistors before and after stress and it is newly found that |VTH| of the weaker PFET connected to the LOW node in the cell is selectively lowered by the self-improve mechanism and this |VTH| shift largely contributes to the self-improvement.
Keyword (in Japanese) (See Japanese page) 
(in English) Threshold Voltage / CMOS / SRAM / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 169, SDM2012-65, pp. 13-16, Aug. 2012.
Paper # SDM2012-65 
Date of Issue 2012-07-26 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-65 ICD2012-33 Link to ES Tech. Rep. Archives: SDM2012-65 ICD2012-33

Conference Information
Committee ICD SDM  
Conference Date 2012-08-02 - 2012-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Sapporo Center for Gender Equality, Sapporo, Hokkaido 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low-power, low-voltage device and circuit technology 
Paper Information
Registration To SDM 
Conference Code 2012-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique 
Sub Title (in English)  
Keyword(1) Threshold Voltage  
Keyword(2) CMOS  
Keyword(3) SRAM  
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1st Author's Name Anil Kumar  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Takuya Saraya  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Shinji Miyano  
3rd Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
4th Author's Name Toshiro Hiramoto  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Date Time 2012-08-02 10:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-65, ICD2012-33 
Volume (vol) vol.112 
Number (no) no.169(SDM), no.170(ICD) 
Page pp.13-16 
#Pages
Date of Issue 2012-07-26 (SDM, ICD) 


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