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Paper Abstract and Keywords
Presentation 2012-08-02 15:55
Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42 Link to ES Tech. Rep. Archives: SDM2012-74 ICD2012-42
Abstract (in Japanese) (See Japanese page) 
(in English) A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity storage was developed. The VCCPCM features formation of memory holes in multi-layered stacked gates by using a single mask and a memory array without a selection transistor. As a result of this configuration, the number of process steps for fabricating the VCCPCM is reduced. The excellent scalability of the VCCPCM’s new phase-change material makes it possible to reduce the cell size beyond the scaling limit of flash memory. In addition, a poly-silicon selection diode makes it possible to reduce the cell factor to 4F2. Consequently, relative cost of the VCCPCM compared to 3-D flash memory is reduced to 0.2.
Keyword (in Japanese) (See Japanese page) 
(in English) phase-change memory / chain-cell-type / 3-D / vertical / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 169, SDM2012-74, pp. 59-63, Aug. 2012.
Paper # SDM2012-74 
Date of Issue 2012-07-26 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-74 ICD2012-42 Link to ES Tech. Rep. Archives: SDM2012-74 ICD2012-42

Conference Information
Committee ICD SDM  
Conference Date 2012-08-02 - 2012-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Sapporo Center for Gender Equality, Sapporo, Hokkaido 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low-power, low-voltage device and circuit technology 
Paper Information
Registration To SDM 
Conference Code 2012-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes 
Sub Title (in English)  
Keyword(1) phase-change memory  
Keyword(2) chain-cell-type  
Keyword(3) 3-D  
Keyword(4) vertical  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masaharu Kinoshita  
1st Author's Affiliation Hitachi, Ltd. (Hitachi)
2nd Author's Name Yoshitaka Sasago  
2nd Author's Affiliation Hitachi, Ltd. (Hitachi)
3rd Author's Name Hiroyuki Minemura  
3rd Author's Affiliation Hitachi, Ltd. (Hitachi)
4th Author's Name Yumiko Anzai  
4th Author's Affiliation Hitachi, Ltd. (Hitachi)
5th Author's Name Mitsuharu Tai  
5th Author's Affiliation Hitachi, Ltd. (Hitachi)
6th Author's Name Yoshihisa Fujisaki  
6th Author's Affiliation Hitachi, Ltd. (Hitachi)
7th Author's Name Shuichi Kusaba  
7th Author's Affiliation Hitachi, Ltd. (Hitachi)
8th Author's Name Tadao Morimoto  
8th Author's Affiliation Hitachi, Ltd. (Hitachi)
9th Author's Name Takashi Takahama  
9th Author's Affiliation Hitachi, Ltd. (Hitachi)
10th Author's Name Toshiyuki Mine  
10th Author's Affiliation Hitachi, Ltd. (Hitachi)
11th Author's Name Akio Shima  
11th Author's Affiliation Hitachi, Ltd. (Hitachi)
12th Author's Name Yoshiki Yonamoto  
12th Author's Affiliation Hitachi, Ltd. (Hitachi)
13th Author's Name Takashi Kobayashi  
13th Author's Affiliation Hitachi, Ltd. (Hitachi)
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Speaker
Date Time 2012-08-02 15:55:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2012-74,IEICE-ICD2012-42 
Volume (vol) IEICE-112 
Number (no) no.169(SDM), no.170(ICD) 
Page pp.59-63 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2012-07-26,IEICE-ICD-2012-07-26 


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