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Paper Abstract and Keywords
Presentation 2012-07-26 15:25
Effect of ICP Etching on p-type GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 Link to ES Tech. Rep. Archives: ED2012-45
Abstract (in Japanese) (See Japanese page) 
(in English) Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP etching greatly affected reducing the memory effect in the current-voltage characteristics and difference between the depletion layer capacitances before and after forward current injection. These reductions indicate that the acceptor-type interfacial defects were passivated by H atoms and/or compensated by donor-type defects formed during the ICP etching. Additionally, photoresponse measurements revealed that the etching increased qφB from 2.08 to 2.63 eV. Due to the change of the surface states, the Fermi level position would move to the conduction band edge slightly by the etching. By the annealing, this effect was partially removed, and then the capacitance difference increased and the PR spectrum showed less variation.
Keyword (in Japanese) (See Japanese page) 
(in English) ICP etching / p-GaN / Schottky contacts / memory effect / acceptor type defects / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 154, ED2012-45, pp. 21-24, July 2012.
Paper # ED2012-45 
Date of Issue 2012-07-19 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-45 Link to ES Tech. Rep. Archives: ED2012-45

Conference Information
Committee ED  
Conference Date 2012-07-26 - 2012-07-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Process and Devices (surface, interface, reliability), others 
Paper Information
Registration To ED 
Conference Code 2012-07-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of ICP Etching on p-type GaN Schottky Contacts 
Sub Title (in English)  
Keyword(1) ICP etching  
Keyword(2) p-GaN  
Keyword(3) Schottky contacts  
Keyword(4) memory effect  
Keyword(5) acceptor type defects  
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Keyword(7)  
Keyword(8)  
1st Author's Name Toshifumi Takahashi  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Naoki Kaneda  
2nd Author's Affiliation Hitachi Cable Ltd. (Hitachi Cable)
3rd Author's Name Tomoyoshi Mishima  
3rd Author's Affiliation Hitachi Cable Ltd. (Hitachi Cable)
4th Author's Name Kazuki Nomoto  
4th Author's Affiliation University of Notre Dame (Univ. of Notre Dame)
5th Author's Name Kenji Shiojima  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker
Date Time 2012-07-26 15:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2012-45 
Volume (vol) IEICE-112 
Number (no) no.154 
Page pp.21-24 
#Pages IEICE-4 
Date of Issue IEICE-ED-2012-07-19 


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