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| Presentation | 2012-07-26 15:50 Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui)  ED2012-46 Link to ES Tech. Rep. Archives: ED2012-46 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900℃) of an NH3 gas supply (TNH3) on cooling down at the end of the growth to control the surface stoichiometry. In the internal photoemission results, the Schottky barrier heights of all the samples were as high as around 2.2 eV, and a slight increase by 0.1 eV was observed when the TNH3 decreased from 900 to 300℃. At the same time, carrier capture and emission from accepter-like mid-gap level defects decreased as the TNH3 decrease. The N-rich cooling-down condition tends to passivate the acceptor type defects or create donor type defects for the compensation, and the pinning position at the interface might be moved to the conduction band edge slightly. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | surface stoichiometry / p-GaN / Schottky contacts / acceptor type defects / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 154, ED2012-46, pp. 25-30, July 2012. | |
| Paper # | ED2012-46 | |
| Date of Issue | 2012-07-19 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-46 Link to ES Tech. Rep. Archives: ED2012-46 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2012-07-26 - 2012-07-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Process and Devices (surface, interface, reliability), others |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-07-ED |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts |
| Sub Title (in English) | |
| Keyword(1) | surface stoichiometry |
| Keyword(2) | p-GaN |
| Keyword(3) | Schottky contacts |
| Keyword(4) | acceptor type defects |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toshifumi Takahashi |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
| 2nd Author's Name | Naoki Kaneda |
| 2nd Author's Affiliation | Hitachi Cable Ltd. (Hitachi Cable) |
| 3rd Author's Name | Tomoyoshi Mishima |
| 3rd Author's Affiliation | Hitachi Cable Ltd. (Hitachi Cable) |
| 4th Author's Name | Takashi Kajiwara |
| 4th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 5th Author's Name | Satoru Tanaka |
| 5th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 6th Author's Name | Kenji Shiojima |
| 6th Author's Affiliation | University of Fukui (Univ. of Fukui) |
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| Speaker | Author-1 |
| Date Time | 2012-07-26 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-46 |
| Volume (vol) | vol.112 |
| Number (no) | no.154 |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2012-07-19 (ED) |
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