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Paper Abstract and Keywords
Presentation 2012-07-26 15:50
Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46 Link to ES Tech. Rep. Archives: ED2012-46
Abstract (in Japanese) (See Japanese page) 
(in English) Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900℃) of an NH3 gas supply (TNH3) on cooling down at the end of the growth to control the surface stoichiometry. In the internal photoemission results, the Schottky barrier heights of all the samples were as high as around 2.2 eV, and a slight increase by 0.1 eV was observed when the TNH3 decreased from 900 to 300℃. At the same time, carrier capture and emission from accepter-like mid-gap level defects decreased as the TNH3 decrease. The N-rich cooling-down condition tends to passivate the acceptor type defects or create donor type defects for the compensation, and the pinning position at the interface might be moved to the conduction band edge slightly.
Keyword (in Japanese) (See Japanese page) 
(in English) surface stoichiometry / p-GaN / Schottky contacts / acceptor type defects / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 154, ED2012-46, pp. 25-30, July 2012.
Paper # ED2012-46 
Date of Issue 2012-07-19 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-46 Link to ES Tech. Rep. Archives: ED2012-46

Conference Information
Committee ED  
Conference Date 2012-07-26 - 2012-07-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Process and Devices (surface, interface, reliability), others 
Paper Information
Registration To ED 
Conference Code 2012-07-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts 
Sub Title (in English)  
Keyword(1) surface stoichiometry  
Keyword(2) p-GaN  
Keyword(3) Schottky contacts  
Keyword(4) acceptor type defects  
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1st Author's Name Toshifumi Takahashi  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Naoki Kaneda  
2nd Author's Affiliation Hitachi Cable Ltd. (Hitachi Cable)
3rd Author's Name Tomoyoshi Mishima  
3rd Author's Affiliation Hitachi Cable Ltd. (Hitachi Cable)
4th Author's Name Takashi Kajiwara  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name Satoru Tanaka  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
6th Author's Name Kenji Shiojima  
6th Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker
Date Time 2012-07-26 15:50:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2012-46 
Volume (vol) IEICE-112 
Number (no) no.154 
Page pp.25-30 
#Pages IEICE-6 
Date of Issue IEICE-ED-2012-07-19 


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