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| Presentation | 2012-07-19 15:30 [Tutorial Invited Lecture] Flash memory: its principle of operation and current development issues Akira Nishiyama (Toshiba Corp), Koichi Muraoka (Toshiba Corp.)  MR2012-11 Link to ES Tech. Rep. Archives: MR2012-11 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Currently, flash memory is used in various electrical apparatus, such as smartphones, digital products, PCs and servers. Contrary to HDD and ODD, flash memory operates only by the movement of carriers inside the semiconductor devices; NOR-type uses hot electrons, while NAND-type uses FN tunneling electrons. The operation principle of both types is introduced along with their applications. And issues for the realization of Tbit density of NAND flash is explained along with their development direction. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | flash memory / NOR-type / NAND-type / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, July 2012. | |
| Paper # | ||
| Date of Issue | 2012-07-12 (MR) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MR2012-11 Link to ES Tech. Rep. Archives: MR2012-11 |
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| Conference Information | |
| Committee | MRIS ITE-MMS |
| Conference Date | 2012-07-19 - 2012-07-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Ibaraki Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Recording medium, etc. |
| Paper Information | |
| Registration To | MRIS |
| Conference Code | 2012-07-MR-MMS |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Flash memory: its principle of operation and current development issues |
| Sub Title (in English) | |
| Keyword(1) | flash memory |
| Keyword(2) | NOR-type |
| Keyword(3) | NAND-type |
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| 1st Author's Name | Akira Nishiyama |
| 1st Author's Affiliation | Toshiba Corporation (Toshiba Corp) |
| 2nd Author's Name | Koichi Muraoka |
| 2nd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
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| Speaker | Author-1 |
| Date Time | 2012-07-19 15:30:00 |
| Presentation Time | 60 minutes |
| Registration for | MRIS |
| Paper # | MR2012-11 |
| Volume (vol) | vol.112 |
| Number (no) | no.137 |
| Page | pp.17-21 |
| #Pages | 5 |
| Date of Issue | 2012-07-12 (MR) |
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