The effect of a sacrificial layer residue on a cantilever beam in the nano-electro-mechanical nonvolatile memory is investigated for the optimization of reliability characteristics. Different from previous research, pull in voltage model of nano-electro-mechanical nonvolatile memory used triangular residue layer which is considered by real wet etching process. Modified pull in voltage model was investigated with triangular shape sacrificial layer residue.
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The effect of a sacrificial layer residue on a cantilever beam in the nano-electro-mechanical nonvolatile memory is investigated for the optimization of reliability characteristics. Different from previous research, pull in voltage model of nano-electro-mechanical nonvolatile memory used triangular residue layer which is considered by real wet etching process. Modified pull in voltage model was investigated with triangular shape sacrificial layer residue.