講演抄録/キーワード |
講演名 |
2012-06-27 11:15
Optimization and characterization of 600V super junction power MOSFET using a deep trench structure ○Yong Tae Kim(KIST)・Eun Sik Jung(Maplesemiconductor Inc.)・Ey Goo Kang(Far East Univ.) エレソ技報アーカイブはこちら |
抄録 |
(和) |
Recently, Power MOSFET has been intensively investigated as voltage-driven devices for the applications of large power switching devices, converter, and motor control. But, a main drawback is that the on-resistance is proportionally increased with higher breakdown voltage spikes. In this work, we have designed deep trench structure and optimized design parameters of 600V super junction Power MOSFET. Comparison of the relationship between breakdown voltage and on-resistance characteristics indicates that the super junction structure provides relatively higher breakdown voltage than the conventional planar type and the on-resistance of super junction Power MOSFET can be reduced by 40 % comparing that of the Planar MOSFET at the same cell pitch and breakdown voltage. |
(英) |
Recently, Power MOSFET has been intensively investigated as voltage-driven devices for the applications of large power switching devices, converter, and motor control. But, a main drawback is that the on-resistance is proportionally increased with higher breakdown voltage spikes. In this work, we have designed deep trench structure and optimized design parameters of 600V super junction Power MOSFET. Comparison of the relationship between breakdown voltage and on-resistance characteristics indicates that the super junction structure provides relatively higher breakdown voltage than the conventional planar type and the on-resistance of super junction Power MOSFET can be reduced by 40 % comparing that of the Planar MOSFET at the same cell pitch and breakdown voltage. |
キーワード |
(和) |
Super junction / Power MOSFET / Deep trench / On-resistance / Optimization / / / |
(英) |
Super junction / Power MOSFET / Deep trench / On-resistance / Optimization / / / |
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