| 講演抄録／キーワード |
| 講演名 |
2012-06-27 15:45
［招待講演］Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits
○Seiya Kasai（Hokkaido Univ.）・Shaharin Fadzli Abd Rahman（UTM/Hokkaido Univ.）・Masaki Sato・Xiang Yin（Hokkaido Univ.）・Toshihiko Maemoto（Osaka Inst. Tech.） エレソ技報アーカイブはこちら |
| 抄録 |
（和） |
A nanometer-scale semiconductor three-branch junction (TBJ) structure exhibits an unique nonlinear voltage transfer characteristic even at room temperature, which is not expected from the classical resistance network. In this paper, we present results of the recent study on the nonlinear mechanism for III-V semiconductor-based TBJs and discuss their application to logic circuits. Size-dependence of the nonlinear transfer curve and laser-induced conductance modulation reveals the asymmetric conductance in the structure is responsible for the nonlinearity at room temperature. The nonlinear curves can be controlled by gate on the input branches and nearly ideal voltage signal transfer efficiency is realized. The TBJ-based logic gate family is introduced and a set-reset-type flip flop (SR-FF) circuit integrating GaAs-based TBJs is demonstrated. We also mention on the fabrication and characterization of a graphene-based TBJ and its unique characteristic based on the gate control of the ambipolar carriers. |
| （英） |
A nanometer-scale semiconductor three-branch junction (TBJ) structure exhibits an unique nonlinear voltage transfer characteristic even at room temperature, which is not expected from the classical resistance network. In this paper, we present results of the recent study on the nonlinear mechanism for III-V semiconductor-based TBJs and discuss their application to logic circuits. Size-dependence of the nonlinear transfer curve and laser-induced conductance modulation reveals the asymmetric conductance in the structure is responsible for the nonlinearity at room temperature. The nonlinear curves can be controlled by gate on the input branches and nearly ideal voltage signal transfer efficiency is realized. The TBJ-based logic gate family is introduced and a set-reset-type flip flop (SR-FF) circuit integrating GaAs-based TBJs is demonstrated. We also mention on the fabrication and characterization of a graphene-based TBJ and its unique characteristic based on the gate control of the ambipolar carriers. |
| キーワード |
（和） |
TBJ / Nanowire / Nonlinear / GaAs / Graphene / Logic circuit / SR-FF / |
| （英） |
TBJ / Nanowire / Nonlinear / GaAs / Graphene / Logic circuit / SR-FF / |
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