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Paper Abstract and Keywords
Presentation 2012-06-27 13:45
A High Performance SRAM Sense Amplifier with Vertical MOSFET
Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a high performance SRAM sense amplifier with vertical MOSFET is proposed, and its performances are investigated. The proposed SRAM sense amplifier with the vertical MOSFET realizes a 22% faster sensing time relative to the conventional SRAM sense amplifier with the planar MOSFET. Furthermore, the proposed SRAM sense amplifier with the vertical MOSFET achieves an 1.11dB increased voltage gain G(f) relative to the conventional SRAM sense amplifier with the planar MOSFET. As a result, the proposed SRAM sense amplifier with the vertical MOSFET is a promising circuit technique for high speed operation of the SRAM core circuit with excellent stability.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / sense amplifier / vertical MOSFET / sensing time / high speed / voltage gain / stability /  
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Conference Information
Committee SDM ED  
Conference Date 2012-06-27 - 2012-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen-kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A High Performance SRAM Sense Amplifier with Vertical MOSFET 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) sense amplifier  
Keyword(3) vertical MOSFET  
Keyword(4) sensing time  
Keyword(5) high speed  
Keyword(6) voltage gain  
Keyword(7) stability  
Keyword(8)  
1st Author's Name Hyoungjun Na  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tetsuo Endoh  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2012-06-27 13:45:00 
Presentation Time 15 minutes 
Registration for SDM 
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