The effects of random-dopant-fluctuation (RDF) on NAND flash memory cells are investigated by using device simulation. This simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration of source, drain and body regions. It is found that the RDF effects are more serious in NAND flash memory cells than in CMOS devices.
(英)
The effects of random-dopant-fluctuation (RDF) on NAND flash memory cells are investigated by using device simulation. This simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration of source, drain and body regions. It is found that the RDF effects are more serious in NAND flash memory cells than in CMOS devices.