| Paper Abstract and Keywords |
| Presentation |
2012-06-27 15:45
Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors
Jungil Yang, Donghee Lee, Dongkyu Cho, Sanghyun Woo, Yoosung Lim, Sungmin Park, Daekuk Kim, Moonsuk Yi (PNU.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Metal-oxide thin film transistors (TFTs) have been fabricated using HfO2 and co-sputtered HfO2–Ti (HfTiO) as gate dielectric materials and indium zinc oxide (IZO) as active/electrode layers for improved electrical performance. All deposition processes were carried out using only shadow masks and radio-frequency magnetron sputtering, which is applicable for large-area deposition and flexible substrates to make the processes simple and efficient. The structural and electrical properties of HfTiO films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDXS) and by using an EL-423 semiconductor test and analyzer. A comparison between TFTs with HfTiO dielectric and those with HfO2 dielectric showed that the dielectric constant increased from 11 to 22 and that the leakage current and the on/off current ratio were improved from 8.1  10-9 A and 104 to 7.7  10-12 A and 105, respectively. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
HfO2 / Ti / HfTiO / High-K / Sputter / IZO / Oxide TFT / Transparent TFT |
| Reference Info. |
IEICE Tech. Rep. |
| Paper # |
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| Download PDF |
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| Conference Information |
| Committee |
SDM ED |
| Conference Date |
2012-06-27 - 2012-06-29 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Okinawa Seinen-kaikan |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2012-06-SDM-ED |
| Language |
English |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors |
| Sub Title (in English) |
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| Keyword(1) |
HfO2 |
| Keyword(2) |
Ti |
| Keyword(3) |
HfTiO |
| Keyword(4) |
High-K |
| Keyword(5) |
Sputter |
| Keyword(6) |
IZO |
| Keyword(7) |
Oxide TFT |
| Keyword(8) |
Transparent TFT |
| 1st Author's Name |
Jungil Yang |
| 1st Author's Affiliation |
Pusan National University (PNU.) |
| 2nd Author's Name |
Donghee Lee |
| 2nd Author's Affiliation |
Pusan National University (PNU.) |
| 3rd Author's Name |
Dongkyu Cho |
| 3rd Author's Affiliation |
Pusan National University (PNU.) |
| 4th Author's Name |
Sanghyun Woo |
| 4th Author's Affiliation |
Pusan National University (PNU.) |
| 5th Author's Name |
Yoosung Lim |
| 5th Author's Affiliation |
Pusan National University (PNU.) |
| 6th Author's Name |
Sungmin Park |
| 6th Author's Affiliation |
Pusan National University (PNU.) |
| 7th Author's Name |
Daekuk Kim |
| 7th Author's Affiliation |
Pusan National University (PNU.) |
| 8th Author's Name |
Moonsuk Yi |
| 8th Author's Affiliation |
Pusan National University (PNU.) |
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| Speaker |
Author-1 |
| Date Time |
2012-06-27 15:45:00 |
| Presentation Time |
15 minutes |
| Registration for |
SDM |
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| Volume (vol) |
vol. |
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