We propose a asymmetric poly-Si thin film transistor with a thicker drain and a thicker dielectric near the drain region. The thick drain and thick dielectric at the gate edge effectively reduces the drain lateral electric fields with simple processes. Simulated results show that the asymmetric TFTs have low OFF-state leakage currents, improved ON/OFF current ratio, and reduced impact ionization compared with conventional TFTs.
（英）
We propose a asymmetric poly-Si thin film transistor with a thicker drain and a thicker dielectric near the drain region. The thick drain and thick dielectric at the gate edge effectively reduces the drain lateral electric fields with simple processes. Simulated results show that the asymmetric TFTs have low OFF-state leakage currents, improved ON/OFF current ratio, and reduced impact ionization compared with conventional TFTs.