| 講演抄録／キーワード |
| 講演名 |
2012-06-27 13:15
Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors
○Sang Wan Kim（Seoul National Univ.）・Woo Young Choi（Sogang Univ.）・Min-Chul Sun・Hyun Woo Kim・Byung-Gook Park（Seoul National Univ.） エレソ技報アーカイブはこちら |
| 抄録 |
（和） |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low off-current (Ioff), small subthreshold swing (SS) and CMOS-compatible process. In our previous research, L-shaped TFETs were proposed and discussed in order to improve several technical issues such as low current drivability, short channel effects including drain induced barrier thinning (DIBT) and disappointing SS. In this paper, we have optimized the design of
L-shaped TFETs. |
| （英） |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low off-current (Ioff), small subthreshold swing (SS) and CMOS-compatible process. In our previous research, L-shaped TFETs were proposed and discussed in order to improve several technical issues such as low current drivability, short channel effects including drain induced barrier thinning (DIBT) and disappointing SS. In this paper, we have optimized the design of
L-shaped TFETs. |
| キーワード |
（和） |
tunneling / field-effect transistors / TFETs / L-shaped TFET / inverter / subthreshold swing / / |
| （英） |
tunneling / field-effect transistors / TFETs / L-shaped TFET / inverter / subthreshold swing / / |
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信学技報 |
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