Paper Abstract and Keywords |
Presentation |
2012-06-21 15:55
Doping and behaviors of impurity atoms in silicon nanowires
-- Segregation behaviors of dopant atoms during thermal oxidation -- Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba) SDM2012-58 Link to ES Tech. Rep. Archives: SDM2012-58 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In order to realize the next-generation MOSFETs, it is indispensable to realize the size, site, and structure controls in nano-scale. In addition to these, doping control and the development of characterization methods are also very important. Until now, we could experimentally succeed in detecting the dopant impurities (B and P) and clarify their bonding and electrical states in SiNWs by micro-Raman scattering and electron spin resonance methods. The segregation behaviors of B and P atoms during thermal oxidation were investigated by using these techniques, showing that B segregation into surface oxide layers was more pronounced than P segregation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon nanowire / Doping / Raman scattering / Electron spin resonance / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 92, SDM2012-58, pp. 81-85, June 2012. |
Paper # |
SDM2012-58 |
Date of Issue |
2012-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-58 Link to ES Tech. Rep. Archives: SDM2012-58 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-06-21 - 2012-06-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Doping and behaviors of impurity atoms in silicon nanowires |
Sub Title (in English) |
Segregation behaviors of dopant atoms during thermal oxidation |
Keyword(1) |
Silicon nanowire |
Keyword(2) |
Doping |
Keyword(3) |
Raman scattering |
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Electron spin resonance |
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1st Author's Name |
Naoki Fukata |
1st Author's Affiliation |
National Institute for Materials Science (NIMS) |
2nd Author's Name |
Ryo Takiguchi |
2nd Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
3rd Author's Name |
Shinya Ishida |
3rd Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
4th Author's Name |
Shigeki Yokono |
4th Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
5th Author's Name |
Takashi Sekiguchi |
5th Author's Affiliation |
National Institute for Materials Science (NIMS) |
6th Author's Name |
Kouichi Murakami |
6th Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
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Speaker |
Author-1 |
Date Time |
2012-06-21 15:55:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2012-58 |
Volume (vol) |
vol.112 |
Number (no) |
no.92 |
Page |
pp.81-85 |
#Pages |
5 |
Date of Issue |
2012-06-14 (SDM) |
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