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Paper Abstract and Keywords
Presentation 2012-05-18 11:15
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 Link to ES Tech. Rep. Archives: ED2012-31 CPM2012-15 SDM2012-33
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never completely understood crystal defects in SiC which influence on device performance, therefore we need to study for crystal defects. Although studies for deep-levels in p-type 4H-SiC have been reported, deep-levels acting as recombination centers have been seldom reported. In this work, we have measured deep-levels in (0001) Si face epitaxial p-type 4H-SiC layers with the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated by electrons in order to introduce defects. As a result, we found electron irradiation to p-type 4H-SiC would create complex defects behaving as recombination centers rather than the carbon vacancy.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / I-DLTS / deep-level / electron irradiation / carbon vacancy / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 33, CPM2012-15, pp. 67-72, May 2012.
Paper # CPM2012-15 
Date of Issue 2012-05-10 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-31 CPM2012-15 SDM2012-33 Link to ES Tech. Rep. Archives: ED2012-31 CPM2012-15 SDM2012-33

Conference Information
Committee ED SDM CPM  
Conference Date 2012-05-17 - 2012-05-18 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Toyohashi Univ. of Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-05-ED-SDM-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) I-DLTS  
Keyword(3) deep-level  
Keyword(4) electron irradiation  
Keyword(5) carbon vacancy  
1st Author's Name Kazuki Yoshihara  
1st Author's Affiliation Nagoya Institute of Technology (NIT)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (NIT)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (NIT)
4th Author's Name Tomoaki Hatayama  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takeshi Ohshima  
5th Author's Affiliation Japan Atomic Energy Agency (JAEA)
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Date Time 2012-05-18 11:15:00 
Presentation Time 25 
Registration for CPM 
Paper # IEICE-ED2012-31,IEICE-CPM2012-15,IEICE-SDM2012-33 
Volume (vol) IEICE-112 
Number (no) no.32(ED), no.33(CPM), no.34(SDM) 
Page pp.67-72 
#Pages IEICE-6 
Date of Issue IEICE-ED-2012-05-10,IEICE-CPM-2012-05-10,IEICE-SDM-2012-05-10 

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