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| Presentation | 2012-05-18 11:15 Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA)  ED2012-31 CPM2012-15 SDM2012-33 Link to ES Tech. Rep. Archives: ED2012-31 CPM2012-15 SDM2012-33 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never completely understood crystal defects in SiC which influence on device performance, therefore we need to study for crystal defects. Although studies for deep-levels in p-type 4H-SiC have been reported, deep-levels acting as recombination centers have been seldom reported. In this work, we have measured deep-levels in (0001) Si face epitaxial p-type 4H-SiC layers with the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated by electrons in order to introduce defects. As a result, we found electron irradiation to p-type 4H-SiC would create complex defects behaving as recombination centers rather than the carbon vacancy. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 4H-SiC / I-DLTS / deep-level / electron irradiation / carbon vacancy / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 33, CPM2012-15, pp. 67-72, May 2012. | |
| Paper # | CPM2012-15 | |
| Date of Issue | 2012-05-10 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-31 CPM2012-15 SDM2012-33 Link to ES Tech. Rep. Archives: ED2012-31 CPM2012-15 SDM2012-33 |
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| Conference Information | |
| Committee | ED SDM CPM |
| Conference Date | 2012-05-17 - 2012-05-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Toyohashi Univ. of Technol. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2012-05-ED-SDM-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | I-DLTS |
| Keyword(3) | deep-level |
| Keyword(4) | electron irradiation |
| Keyword(5) | carbon vacancy |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuki Yoshihara |
| 1st Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 2nd Author's Name | Masashi Kato |
| 2nd Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 3rd Author's Name | Masaya Ichimura |
| 3rd Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 4th Author's Name | Tomoaki Hatayama |
| 4th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 5th Author's Name | Takeshi Ohshima |
| 5th Author's Affiliation | Japan Atomic Energy Agency (JAEA) |
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| Speaker | Author-1 |
| Date Time | 2012-05-18 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2012-31, CPM2012-15, SDM2012-33 |
| Volume (vol) | vol.112 |
| Number (no) | no.32(ED), no.33(CPM), no.34(SDM) |
| Page | pp.67-72 |
| #Pages | 6 |
| Date of Issue | 2012-05-10 (ED, CPM, SDM) |
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