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| Presentation | 2012-05-18 09:25 Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.)  ED2012-27 CPM2012-11 SDM2012-29 Link to ES Tech. Rep. Archives: ED2012-27 CPM2012-11 SDM2012-29 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure. ICP-assisted plasma with Cl2/BCl3 gas mixture was used for the dry etching. After the dry etching, we fabricated an Al2O3-insulated gate on AlGaN/GaN surface by atomic layer depositon (ALD). To characterize the interface properties of Al2O3/AlGaN, we performed standard capacitance-voltage (C-V) measurements and photo-assisted method. The lager threshold voltage shift due to the photo-assisted electron emission indicated that the ICP etching leads to an increase the Al2O3/AlGaN interface states density. From the X-ray photoelectron spectroscopy, we observed that the ICP process induced the nitrogen vacancy at the AlGaN surface, causing high-density of electron states at Al2O3/AlGaN interface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | dry etching / ICP / AlGaN / MOS / Al2O3 / C-V / interface state / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 32, ED2012-27, pp. 49-52, May 2012. | |
| Paper # | ED2012-27 | |
| Date of Issue | 2012-05-10 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-27 CPM2012-11 SDM2012-29 Link to ES Tech. Rep. Archives: ED2012-27 CPM2012-11 SDM2012-29 |
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| Conference Information | |
| Committee | ED SDM CPM |
| Conference Date | 2012-05-17 - 2012-05-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Toyohashi Univ. of Technol. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-05-ED-SDM-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces |
| Sub Title (in English) | |
| Keyword(1) | dry etching |
| Keyword(2) | ICP |
| Keyword(3) | AlGaN |
| Keyword(4) | MOS |
| Keyword(5) | Al2O3 |
| Keyword(6) | C-V |
| Keyword(7) | interface state |
| Keyword(8) | |
| 1st Author's Name | Zenji Yatabe |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Yujin Hori |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Sungsik Kim |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Tamotsu Hashizume |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-05-18 09:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-27, CPM2012-11, SDM2012-29 |
| Volume (vol) | vol.112 |
| Number (no) | no.32(ED), no.33(CPM), no.34(SDM) |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2012-05-10 (ED, CPM, SDM) |
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